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NJW0281G PDF预览

NJW0281G

更新时间: 2024-11-05 06:00:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
5页 75K
描述
Complementary NPN-PNP Power Bipolar Transistors

NJW0281G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-3P包装说明:ROHS COMPLIANT, CASE 340AB-01, TO-3P, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.05Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:226611
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:NJW0281G-1
Samacsys Released Date:2017-08-20 14:52:55Is Samacsys:N
最大集电极电流 (IC):15 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):75
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

NJW0281G 数据手册

 浏览型号NJW0281G的Datasheet PDF文件第2页浏览型号NJW0281G的Datasheet PDF文件第3页浏览型号NJW0281G的Datasheet PDF文件第4页浏览型号NJW0281G的Datasheet PDF文件第5页 
NJW0281G (NPN)  
NJW0302G (PNP)  
Preferred Devices  
Complementary NPN-PNP  
Power Bipolar Transistors  
These complementary devices are lower power versions of the  
popular NJW3281G and NJW1302G audio output transistors. With  
superior gain linearity and safe operating area performance, these  
transistors are ideal for high fidelity audio amplifier output stages and  
other linear applications.  
http://onsemi.com  
15 AMPERES  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
250 VOLTS, 150 WATTS  
Features  
ꢀExceptional Safe Operating Area  
ꢀNPN/PNP Gain Matching within 10% from 50 mA to 3 A  
ꢀExcellent Gain Linearity  
ꢀHigh BVCEO  
ꢀHigh Frequency  
ꢀThese are Pb-Free Devices  
MARKING  
DIAGRAM  
NJWxxxG  
AYWW  
Benefits  
ꢀReliable Performance at Higher Powers  
ꢀSymmetrical Characteristics in Complementary Configurations  
ꢀAccurate Reproduction of Input Signal  
ꢀGreater Dynamic Range  
TO-3P  
CASE 340AB  
ꢀHigh Amplifier Bandwith  
Applications  
xxxx  
G
= 0281 or 0302  
= Pb-Free Package  
= Assembly Location  
= Year  
ꢀHigh-End Consumer Audio Products  
ꢀHome Amplifiers  
A
Y
WW  
ꢀHome Receivers  
= Work Week  
ꢀProfessional Audio Amplifiers  
ꢀTheater and Stadium Sound Systems  
ꢀPublic Address Systems (PAs)  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
Package  
Shipping  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Value  
250  
250  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
NJW0281G  
TO-3P  
(Pb-Free)  
30 Units/Rail  
V
CEO  
CBO  
NJW0302G  
TO-3P  
(Pb-Free)  
30 Units/Rail  
V
V
EBO  
V
CEX  
Collector-Emitter Voltage - 1.5 V  
250  
Preferred devices are recommended choices for future use  
and best overall value.  
Collector Current - Continuous  
Collector Current - Peak (Note 1)  
I
C
15  
30  
Base Current - Continuous  
I
1.5  
Adc  
Watts  
°C  
B
Total Power Dissipation @ T = 25°C  
P
150  
C
D
Operating and Storage Junction  
Temperature Range  
T , T  
J
-ā 65 to  
+150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
January, 2008 - Rev. 0  
1
Publication Order Number:  
NJW0281/D  
 

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