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NJVNJD35N04T4G

更新时间： 2024-09-15 12:29:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
4页	128K
描述
NPN Darlington Power Transistor

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中文翻译

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技术参数
数据手册
替代型号

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NJVNJD35N04T4G 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	20 weeks
风险等级：	5.67	Is Samacsys：	N
最大集电极电流 (IC)：	4 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	300	JESD-609代码：	e3
湿度敏感等级：	1	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	45 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	标称过渡频率 (fT)：	90 MHz
Base Number Matches：	1

NJVNJD35N04T4G 数据手册

NJD35N04G,

NJVNJD35N04G,

NJVNJD35N04T4G

NPN Darlington Power

Transistor

http://onsemi.com

This high voltage power Darlington has been specifically designed

for inductive applications such as Electronic Ignition, Switching

Regulators and Motor Control.

DARLINGTON

POWER TRANSISTORS

4 AMPERES

Features

 Exceptional Safe Operating Area

 High V ; High Current Gain

350 VOLTS

45 WATTS

 NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

 These are Pb−Free Devices*

Benefits

 Reliable Performance at Higher Powers

 Designed for Inductive Loads

 Very Low Current Requirements

Applications

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAM

 Internal Combustion Engine Ignition Control

 Switching Regulators

 Motor Controls

YWW

NJD

35N04G

 Light Ballast

 Photo Flash

= Year

= Work Week

MAXIMUM RATINGS

NJD35N04 = Device Code

= Pb−Free Device

Rating

Symbol

Value

350

700

5.0

Unit

Vdc

Adc

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

CEO

CBO

ORDERING INFORMATION

†

Device

Package

Shipping

CES

NJD35N04G

DPAK

75 Units / Rail

EBO

(Pb−Free)

Collector Current

Continuous

Peak

4.0

8.0

NJVNJD35N04G

NJD35N04T4G

NJVNJD35N04T4G

DPAK

(Pb−Free)

75 Units / Rail

Base Current

0.5

Adc

DPAK

(Pb−Free)

2,500 /

Tape & Reel

Total Power Dissipation

@ T = 25C

0.36

W/C

DPAK

2,500 /

Derate above 25C

(Pb−Free)

Tape & Reel

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

C

stg

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

February, 2012 − Rev. 5

NJD35N04/D

12 3 4

中文翻译

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NJVNJD35N04T4G 替代型号

型号	品牌	替代类型	描述	数据表
NJD35N04T4G	ONSEMI	类似代替	NPN Darlington Power Transistor

与NJVNJD35N04T4G相关器件

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NJW#1143M-TE1	NJRC	获取价格	Micro Peripheral IC,
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NJW#1190V-TE2	NJRC	获取价格	Micro Peripheral IC,
NJW0281G	ONSEMI	获取价格	Complementary NPN-PNP Power Bipolar Transistors
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NJW0281GD	FOSHAN	获取价格	TO-3P
NJW0302G	ONSEMI	获取价格	Complementary NPN-PNP Power Bipolar Transistors
NJW0302G	MICROSEMI	获取价格	150 Watt Silicon Epitaxial Planar PNP Power Transistor

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