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NJVNJD35N04G PDF预览

NJVNJD35N04G

更新时间: 2024-11-05 12:29:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 128K
描述
NPN Darlington Power Transistor

NJVNJD35N04G 技术参数

是否无铅: 不含铅生命周期:Active
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:2.06最大集电极电流 (IC):4 A
配置:DARLINGTON最小直流电流增益 (hFE):300
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):45 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
标称过渡频率 (fT):90 MHzBase Number Matches:1

NJVNJD35N04G 数据手册

 浏览型号NJVNJD35N04G的Datasheet PDF文件第2页浏览型号NJVNJD35N04G的Datasheet PDF文件第3页浏览型号NJVNJD35N04G的Datasheet PDF文件第4页 
NJD35N04G,  
NJVNJD35N04G,  
NJVNJD35N04T4G  
NPN Darlington Power  
Transistor  
http://onsemi.com  
This high voltage power Darlington has been specifically designed  
for inductive applications such as Electronic Ignition, Switching  
Regulators and Motor Control.  
DARLINGTON  
POWER TRANSISTORS  
4 AMPERES  
Features  
Exceptional Safe Operating Area  
High V ; High Current Gain  
CE  
350 VOLTS  
45 WATTS  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These are PbFree Devices*  
Benefits  
Reliable Performance at Higher Powers  
Designed for Inductive Loads  
Very Low Current Requirements  
Applications  
DPAK  
CASE 369C  
STYLE 1  
MARKING DIAGRAM  
Internal Combustion Engine Ignition Control  
Switching Regulators  
Motor Controls  
YWW  
NJD  
35N04G  
Light Ballast  
Photo Flash  
Y
WW  
= Year  
= Work Week  
MAXIMUM RATINGS  
NJD35N04 = Device Code  
= PbFree Device  
Rating  
Symbol  
Value  
350  
700  
700  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
G
CollectorEmitter Sustaining Voltage  
CollectorBase Breakdown Voltage  
CollectorEmitter Breakdown Voltage  
EmitterBase Voltage  
V
CEO  
CBO  
ORDERING INFORMATION  
V
V
V
Device  
Package  
Shipping  
CES  
NJD35N04G  
DPAK  
75 Units / Rail  
EBO  
(PbFree)  
Collector Current  
Continuous  
Peak  
I
4.0  
8.0  
NJVNJD35N04G  
NJD35N04T4G  
NJVNJD35N04T4G  
DPAK  
(PbFree)  
75 Units / Rail  
C
I
CM  
Base Current  
I
B
0.5  
Adc  
DPAK  
(PbFree)  
2,500 /  
Tape & Reel  
Total Power Dissipation  
P
D
@ T = 25C  
45  
0.36  
W
W/C  
DPAK  
2,500 /  
C
Derate above 25C  
(PbFree)  
Tape & Reel  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 Rev. 5  
NJD35N04/D  

NJVNJD35N04G 替代型号

型号 品牌 替代类型 描述 数据表
NJD35N04G ONSEMI

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NPN Darlington Power Transistor

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