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NJD35N04G PDF预览

NJD35N04G

更新时间: 2024-09-25 03:46:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC
页数 文件大小 规格书
4页 47K
描述
NPN Darlington Power Transistor

NJD35N04G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:PLASTIC, CASE 369C-01, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:20 weeks风险等级:1.37
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:226604Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:DPAKSamacsys Released Date:2016-01-25 14:39:58
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:350 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):300
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):45 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):90 MHz
Base Number Matches:1

NJD35N04G 数据手册

 浏览型号NJD35N04G的Datasheet PDF文件第2页浏览型号NJD35N04G的Datasheet PDF文件第3页浏览型号NJD35N04G的Datasheet PDF文件第4页 
NJD35N04G  
NPN Darlington Power  
Transistor  
This high voltage power Darlington has been specifically designed  
for inductive applications such as Electronic Ignition, Switching  
Regulators and Motor Control.  
http://onsemi.com  
Features  
Exceptional Safe Operating Area  
DARLINGTON  
POWER TRANSISTORS  
4 AMPERES  
High V ; High Current Gain  
CE  
These are Pb−Free Devices  
Benefits  
350 VOLTS  
45 WATTS  
Reliable Performance at Higher Powers  
Designed for Inductive Loads  
Very Low Current Requirements  
Applications  
MARKING  
Internal Combustion Engine Ignition Control  
Switching Regulators  
Motor Controls  
DIAGRAM  
4
YWW  
NJD  
35N04G  
DPAK  
CASE 369C  
STYLE 1  
Light Ballast  
2
1
Photo Flash  
3
Y
= Year  
MAXIMUM RATINGS  
WW  
NJD35N04 = Device Code  
= Pb−Free Device  
= Work Week  
Rating  
Symbol  
Value  
350  
700  
700  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
G
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
V
CEO  
CBO  
V
V
CES  
ORDERING INFORMATION  
EBO  
Device  
Package  
Shipping  
Collector Current  
Continuous  
Peak  
I
4.0  
8.0  
C
NJD35N04G  
DPAK  
75 Units / Rail  
I
CM  
(Pb−Free)  
Base Current  
I
0.5  
Adc  
B
NJD35N04T4G  
DPAK  
2500/Tape & Reel  
(Pb−Free)  
Total Power Dissipation @ T = 25°C  
P
45  
0.36  
W
W/°C  
C
D
Derate above 25°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to  
+150  
°C  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance Junction−to−Case  
R
R
2.78  
71.4  
°C/W  
q
JC  
Junction−to−Ambient  
q
JA  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 1  
NJD35N04/D  

NJD35N04G 替代型号

型号 品牌 替代类型 描述 数据表
NJD35N04T4G ONSEMI

完全替代

NPN Darlington Power Transistor
NJVNJD35N04G ONSEMI

类似代替

NPN Darlington Power Transistor
STD901T STMICROELECTRONICS

功能相似

用于点火线圈的高压NPN达林顿晶体管

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