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NJD35N04G_10 PDF预览

NJD35N04G_10

更新时间: 2024-11-09 06:00:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 92K
描述
NPN Darlington Power Transistor

NJD35N04G_10 数据手册

 浏览型号NJD35N04G_10的Datasheet PDF文件第2页浏览型号NJD35N04G_10的Datasheet PDF文件第3页浏览型号NJD35N04G_10的Datasheet PDF文件第4页 
NJD35N04G  
NPN Darlington Power  
Transistor  
This high voltage power Darlington has been specifically designed  
for inductive applications such as Electronic Ignition, Switching  
Regulators and Motor Control.  
http://onsemi.com  
Features  
Exceptional Safe Operating Area  
DARLINGTON  
POWER TRANSISTORS  
4 AMPERES  
High V ; High Current Gain  
CE  
These are PbFree Devices  
Benefits  
350 VOLTS  
45 WATTS  
Reliable Performance at Higher Powers  
Designed for Inductive Loads  
Very Low Current Requirements  
Applications  
MARKING  
Internal Combustion Engine Ignition Control  
Switching Regulators  
Motor Controls  
Light Ballast  
Photo Flash  
DIAGRAM  
4
YWW  
NJD  
35N04G  
DPAK  
CASE 369C  
STYLE 1  
2
1
3
Y
= Year  
= Work Week  
MAXIMUM RATINGS  
WW  
NJD35N04 = Device Code  
= PbFree Device  
Rating  
Symbol  
Value  
350  
700  
700  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
G
CollectorEmitter Sustaining Voltage  
CollectorBase Breakdown Voltage  
CollectorEmitter Breakdown Voltage  
EmitterBase Voltage  
V
V
CEO  
CBO  
V
V
CES  
ORDERING INFORMATION  
EBO  
Device  
Package  
Shipping  
Collector Current  
Continuous  
Peak  
I
4.0  
8.0  
C
NJD35N04G  
DPAK  
(PbFree)  
75 Units / Rail  
I
CM  
Base Current  
I
B
0.5  
Adc  
NJD35N04T4G  
DPAK  
2500/Tape & Reel  
(PbFree)  
Total Power Dissipation @ T = 25°C  
P
45  
W
C
D
Derate above 25°C  
0.36  
W/°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to  
+150  
°C  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance JunctiontoCase  
R
2.78  
71.4  
°C/W  
q
JC  
JA  
JunctiontoAmbient  
R
q
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 Rev. 2  
NJD35N04/D  

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