NJD35N04G
NPN Darlington Power
Transistor
This high voltage power Darlington has been specifically designed
for inductive applications such as Electronic Ignition, Switching
Regulators and Motor Control.
http://onsemi.com
Features
• Exceptional Safe Operating Area
DARLINGTON
POWER TRANSISTORS
4 AMPERES
• High V ; High Current Gain
CE
• These are Pb−Free Devices
Benefits
350 VOLTS
45 WATTS
• Reliable Performance at Higher Powers
• Designed for Inductive Loads
• Very Low Current Requirements
Applications
MARKING
• Internal Combustion Engine Ignition Control
• Switching Regulators
• Motor Controls
• Light Ballast
• Photo Flash
DIAGRAM
4
YWW
NJD
35N04G
DPAK
CASE 369C
STYLE 1
2
1
3
Y
= Year
= Work Week
MAXIMUM RATINGS
WW
NJD35N04 = Device Code
= Pb−Free Device
Rating
Symbol
Value
350
700
700
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
G
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
V
V
CEO
CBO
V
V
CES
ORDERING INFORMATION
†
EBO
Device
Package
Shipping
Collector Current
Continuous
Peak
I
4.0
8.0
C
NJD35N04G
DPAK
(Pb−Free)
75 Units / Rail
I
CM
Base Current
I
B
0.5
Adc
NJD35N04T4G
DPAK
2500/Tape & Reel
(Pb−Free)
Total Power Dissipation @ T = 25°C
P
45
W
C
D
Derate above 25°C
0.36
W/°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Operating and Storage Junction
Temperature Range
T , T
J
−65 to
+150
°C
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance Junction−to−Case
R
2.78
71.4
°C/W
q
JC
JA
Junction−to−Ambient
R
q
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
July, 2010 − Rev. 2
NJD35N04/D