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NJVMJD44H11G PDF预览

NJVMJD44H11G

更新时间: 2024-09-13 12:02:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC
页数 文件大小 规格书
9页 132K
描述
Complementary Power Transistors

NJVMJD44H11G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, 369C, DPAK-3/2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:0.65
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:329195Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:DPAK (SINGLE GAUGE) TO-252 (369C) ISSUE F_1Samacsys Released Date:2019-09-18 07:59:01
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):20 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):85 MHz
Base Number Matches:1

NJVMJD44H11G 数据手册

 浏览型号NJVMJD44H11G的Datasheet PDF文件第2页浏览型号NJVMJD44H11G的Datasheet PDF文件第3页浏览型号NJVMJD44H11G的Datasheet PDF文件第4页浏览型号NJVMJD44H11G的Datasheet PDF文件第5页浏览型号NJVMJD44H11G的Datasheet PDF文件第6页浏览型号NJVMJD44H11G的Datasheet PDF文件第7页 
MJD44H11,  
NJVMJD44H11 (NPN),  
MJD45H11,  
NJVMJD45H11 (PNP)  
Complementary Power  
Transistors  
http://onsemi.com  
DPAK For Surface Mount Applications  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
80 VOLTS, 20 WATTS  
Features  
MARKING  
DIAGRAMS  
Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
4
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Electrically Similar to Popular D44H/D45H Series  
Low Collector Emitter Saturation Voltage −  
AYWW  
J4  
xH11G  
2
1
3
DPAK  
CASE 369C  
STYLE 1  
V
CE(sat)  
= 1.0 Volt Max @ 8.0 A  
Fast Switching Speeds  
Complementary Pairs Simplifies Designs  
Epoxy Meets UL 94 V0 @ 0.125 in  
4
ESD Ratings: Human Body Model, 3B u 8000 V  
AYWW  
J4  
xH11G  
Machine Model, C u 400 V  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These are PbFree Packages*  
1
2
3
IPAK  
CASE 369D  
STYLE 1  
A
Y
WW  
J4xH11  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Device Code  
x = 4 or 5  
=
PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 14  
MJD44H11/D  

NJVMJD44H11G 替代型号

型号 品牌 替代类型 描述 数据表
MJD44H11T5G ONSEMI

完全替代

Complementary Power Transistors
MJD44H11T5 ONSEMI

完全替代

SILICON POWER TRANSISTORS
MJD44H11T4G ONSEMI

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SILICON POWER TRANSISTORS

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