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NJVMJD44H11T4G-VF01 PDF预览

NJVMJD44H11T4G-VF01

更新时间： 2024-09-13 15:46:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
8页 139K
描述
8 A, 80 V NPN Bipolar Power Transistor, 2500-REEL

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中文翻译

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NJVMJD44H11T4G-VF01 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：DPAK-3/2
Reach Compliance Code：not_compliantFactory Lead Time：10 weeks
风险等级：1.55Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：40JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：85 MHz
Base Number Matches：1

NJVMJD44H11T4G-VF01 数据手册

 浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第2页浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第3页浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第4页浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第5页浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第6页浏览型号NJVMJD44H11T4G-VF01的Datasheet PDF文件第7页 
MJD44H11ꢀ(NPN),  
MJD45H11ꢀ(PNP)  
Complementary Power  
Transistors  
DPAK for Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
80 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Electrically Similar to Popular D44H/D45H Series  
COMPLEMENTARY  
COLLECTOR  
2, 4  
COLLECTOR  
• Low Collector Emitter Saturation Voltage  
• Fast Switching Speeds  
2, 4  
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
1
1
BASE  
BASE  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
3
3
EMITTER  
EMITTER  
• These Devices are Pb−Free and are RoHS Compliant  
4
MAXIMUM RATINGS (T = 25_C, common for NPN and PNP, minus  
A
4
sign, “−”, for PNP omitted, unless otherwise noted)  
Rating  
Symbol  
Max  
80  
5
Unit  
Vdc  
Vdc  
Adc  
Adc  
1
2
1
2
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
CEO  
3
3
V
EB  
DPAK  
CASE 369C  
STYLE 1  
IPAK  
Collector Current − Continuous  
Collector Current − Peak  
Total Power Dissipation  
@ T = 25°C  
Derate above 25°C  
I
C
8
CASE 369D  
STYLE 1  
I
16  
CM  
P
D
20  
0.16  
W
W/°C  
MARKING DIAGRAMS  
C
Total Power Dissipation (Note 1)  
P
D
1.75  
0.014  
W
W/°C  
@ T = 25°C  
A
AYWW  
J4  
xH11G  
AYWW  
J4  
xH11G  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
DPAK  
IPAK  
A
Y
=
=
=
=
Assembly Location  
Year  
Work Week  
Device Code  
x = 4 or 5  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
WW  
J4xH11  
G
=
Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 16  
MJD44H11/D  
 
12345678

中文翻译

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NJVMJD44H11T4G-VF01 替代型号

型号 品牌 替代类型 描述 数据表
MJD44H11T5G ONSEMI

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