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MJD44H11T5G PDF预览

MJD44H11T5G

更新时间： 2024-11-01 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 76K
描述
Complementary Power Transistors

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中文翻译

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MJD44H11T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：0.42外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：85 MHz
Base Number Matches：1

MJD44H11T5G 数据手册

 浏览型号MJD44H11T5G的Datasheet PDF文件第2页浏览型号MJD44H11T5G的Datasheet PDF文件第3页浏览型号MJD44H11T5G的Datasheet PDF文件第4页浏览型号MJD44H11T5G的Datasheet PDF文件第5页浏览型号MJD44H11T5G的Datasheet PDF文件第6页浏览型号MJD44H11T5G的Datasheet PDF文件第7页 
MJD44H11 (NPN)  
MJD45H11 (PNP)  
Preferred Device  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
80 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
MARKING  
DIAGRAMS  
• Electrically Similar to Popular D44H/D45H Series  
• Low Collector Emitter Saturation Voltage −  
4
YWW  
J4  
xH11G  
V
CE(sat)  
= 1.0 Volt Max @ 8.0 Amperes  
• Fast Switching Speeds  
2
1
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
3
DPAK  
CASE 369C  
STYLE 1  
• Pb−Free Packages are Available  
4
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
80  
5
Unit  
Vdc  
Vdc  
Adc  
YWW  
J4  
xH11G  
V
CEO  
V
EB  
1
2
Collector Current − Continuous  
− Peak  
I
8
16  
C
3
DPAK−3  
CASE 369D  
STYLE 1  
Total Power Dissipation  
P
W
D
D
@ T = 25°C  
20  
0.16  
C
Derate above 25°C  
W/°C  
Total Power Dissipation (Note 1)  
P
W
Y
WW  
=
=
=
Year  
1.75  
0.014  
@ T = 25°C  
A
Work Week  
Device Code  
x = 4 or 5  
W/°C  
°C  
Derate above 25°C  
J4xH11  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
J
stg  
G
=
Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
Lead Temperature for Soldering  
T
260  
°C  
Preferred devices are recommended choices for future use  
L
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 7  
MJD44H11/D  
 
1234567

中文翻译

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MJD44H11T5G 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD44H11G ONSEMI

完全替代

 Complementary Power Transistors
MJD44H11T5 ONSEMI

完全替代

 SILICON POWER TRANSISTORS
MJD44H11T4G ONSEMI

类似代替

 SILICON POWER TRANSISTORS

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