是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DPAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 3.39 |
最大集电极电流 (IC): | 8 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD45H11RL | ONSEMI |
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