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MJD45H11TF PDF预览

MJD45H11TF

更新时间: 2024-11-06 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关
页数 文件大小 规格书
5页 164K
描述
PNP Epitaxial Silicon Transistor

MJD45H11TF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.39
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

MJD45H11TF 数据手册

 浏览型号MJD45H11TF的Datasheet PDF文件第2页浏览型号MJD45H11TF的Datasheet PDF文件第3页浏览型号MJD45H11TF的Datasheet PDF文件第4页浏览型号MJD45H11TF的Datasheet PDF文件第5页 
April 2010  
MJD45H11  
PNP Epitaxial Silicon Transistor  
Applications  
• General Purpose Power and Switching Such as Output or Driver Stages in Applications  
• D-PAK for Surface Mount Applications  
Features  
• Load Formed for Surface Mount Application (No Suffix)  
• Straight Lead (I-PAK: “-I” Suffix)  
• Electrically Similar to Popular MJE45H  
• Fast Switching Speeds  
• Low Collector Emitter Saturation Voltage  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Parameter  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
- 80  
Units  
V
V
A
Symbol  
VCEO  
VEBO  
IC  
- 5  
- 8  
Collector Current (DC)  
ICP  
PC  
Collector Current (Pulse)  
Collector Dissipation (TC=25°C)  
Collector Dissipation (TA=25°C)  
Junction Temperature  
- 16  
20  
1.75  
150  
A
W
W
°C  
°C  
TJ  
TSTG  
Storage Temperature  
- 55 to +150  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0  
Typ.  
Parameter  
Test Condition  
Min.  
- 80  
Max.  
Units  
V
ICEO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
VCE = - 80V, IB = 0  
VBE = - 5V, IC = 0  
- 10  
- 50  
µA  
µA  
VCE = - 1V, IC = - 2A  
VCE = - 1V, IC = - 4A  
60  
40  
hFE  
*DC Current Gain  
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A  
VBE(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A  
- 1  
- 1.5  
V
V
fT  
Cob  
tON  
tSTG  
tF  
Current Gain Bandwidth Product  
Collector Capacitance  
Turn On Time  
Storage Time  
Fall Time  
VCE= - 10A, IC = - 0.5A  
VCB = - 10V, f = 1MHz  
40  
230  
135  
500  
100  
MHz  
pF  
ns  
ns  
ns  
IC = - 5A  
IB1= - IB2 = - 0.5A  
* Pulse Test: PW300µs, Duty Cycle2%  
© 2010 Fairchild Semiconductor Corporation  
MJD45H11 Rev. C3  
www.fairchildsemi.com  
1

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