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MJD47 PDF预览

MJD47

更新时间: 2024-11-05 22:46:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压
页数 文件大小 规格书
6页 90K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

MJD47 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252AA包装说明:TO-252, DPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

MJD47 数据手册

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MJD47  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
HIGH VOLTAGE CAPABILITY  
SURFACE-MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
ELECTRICALLY SIMILAR TO TIP47  
3
APPLICATIONS  
1
SWITCH MODE POWER SUPPLIES  
AUDIO AMPLIFIERS  
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER  
DPAK  
TO-252  
(Suffix ”T4”)  
DESCRIPTION  
The MJD47 is manufactured using Medium  
Voltage Epitaxial Planar technology,resulting in a  
rugged high performance cost-effective transistor.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
350  
V
V
250  
5
V
1
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
2
0.6  
A
IB  
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
1.2  
A
Ptot  
Tstg  
Tj  
15  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
January 2000  

MJD47 替代型号

型号 品牌 替代类型 描述 数据表
MJD47T4 STMICROELECTRONICS

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