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MJD47_11 PDF预览

MJD47_11

更新时间: 2024-11-06 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 110K
描述
High Voltage Power Transistors

MJD47_11 数据手册

 浏览型号MJD47_11的Datasheet PDF文件第2页浏览型号MJD47_11的Datasheet PDF文件第3页浏览型号MJD47_11的Datasheet PDF文件第4页浏览型号MJD47_11的Datasheet PDF文件第5页 
MJD47, MJD50  
High Voltage Power  
Transistors  
DPAK For Surface Mount Applications  
Designed for line operated audio output amplifier,  
SWITCHMODEt power supply drivers and other switching  
applications.  
http://onsemi.com  
Features  
NPN SILICON POWER  
TRANSISTORS  
1 AMPERE  
250, 400 VOLTS, 15 WATTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Electrically Similar to Popular TIP47, and TIP50  
250 and 400 V (Min) V  
CEO(sus)  
1 A Rated Collector Current  
4
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
2
1
Machine Model, C u 400 V  
3
These are PbFree Packages  
DPAK  
CASE 369C  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
CollectorEmitter Voltage  
V
CEO  
Vdc  
MJD47  
MJD50  
250  
400  
MARKING DIAGRAM  
CollectorBase Voltage  
EmitterBase Voltage  
V
Vdc  
CB  
AYWW  
JxxG  
MJD47  
MJD50  
350  
500  
V
5
Vdc  
Adc  
EB  
I
1
2
Collector Current Continuous  
Peak  
C
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Jxx = Device Code  
xx = 47 or 50  
Base Current  
I
0.6  
mAdc  
W
B
Total Power Dissipation  
P
D
15  
0.12  
@ T = 25°C  
C
G
= PbFree Package  
W/°C  
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
W
D
1.56  
@ T = 25°C  
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
0.0125  
Derate above 25°C  
W/°C  
°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
80  
Unit  
°C/W  
°C/W  
Thermal Resistance JunctiontoCase  
R
q
JC  
Thermal Resistance JunctiontoAmbient  
R
q
JA  
(Note 1)  
Lead Temperature for Soldering Purpose  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 10  
MJD47/D  
 

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