MJD47-1

更新时间： 2024-11-26 22:29:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	187K
描述
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

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中文翻译

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技术参数
数据手册

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MJD47-1 技术参数

生命周期：	Transferred	包装说明：	IN-LINE, R-PSIP-T3
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.36	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	250 V
配置：	SINGLE	最小直流电流增益 (hFE)：	10
JESD-30 代码：	R-PSIP-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	功耗环境最大值：	15 W
最大功率耗散 (Abs)：	15 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	10 MHz
VCEsat-Max：	1 V	Base Number Matches：	1

MJD47-1 数据手册

Order this document

by MJD47/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

DPAK For Surface Mount Applications

NPN SILICON

POWER TRANSISTORS

1 AMPERE

Designed for line operated audio output amplifier, switchmode power supply drivers

and other switching applications.

•

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP47, and TIP50

250, 400 VOLTS

15 WATTS

250 and 400 V (Min) — V

1 A Rated Collector Current

CEO(sus)

MAXIMUM RATINGS

Rating

Symbol

MJD47

250

MJD50

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CASE 369A–13

350

500

Collector Current — Continuous

Peak

Base Current

0.6

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

CASE 369–07

Total Power Dissipation* @ T = 25 C

Derate above 25 C

1.56

0.0125

Watts

W/ C

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

8.33

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

Lead Temperature for Soldering Purpose

θJC

θJA

260

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) MJD47

Symbol

Min

Max

Unit

250

400

—

Vdc

CEO(sus)

(I = 30 mAdc, I = 0)

MJD50

Collector Cutoff Current

mAdc

CEO

= 150 Vdc, I = 0)

MJD47

MJD50

—

0.2

= 300 Vdc, I = 0)

inches

* When surface mounted on minimum pad sizes recommended.

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

中文翻译

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与MJD47-1相关器件

型号	品牌	获取价格	描述	数据表
MJD47G	ONSEMI	获取价格	High Voltage Power Transistors
MJD47I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD47-I	FAIRCHILD	获取价格	1 A, 250 V, NPN, Si, POWER TRANSISTOR, IPAK-3
MJD47MJD50	TYSEMI	获取价格	Load Formed for Surface Mount Application
MJD47R	SWST	获取价格	功率三极管
MJD47T4	MOTOROLA	获取价格	NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
MJD47T4	ONSEMI	获取价格	1.0 A, 250 V High Voltage NPN Bipolar Power Transistor
MJD47T4	STMICROELECTRONICS	获取价格	NPN power transistor
MJD47T4G	ONSEMI	获取价格	High Voltage Power Transistors
MJD47TF	FAIRCHILD	获取价格	High Voltage and High Reliability D-PAK for Surface Mount Applications

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