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MJD45H11T4 PDF预览

MJD45H11T4

更新时间: 2024-11-06 10:55:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
8页 214K
描述
Complementary power transistors

MJD45H11T4 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:0.62
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179802Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:DPAK (TO-252)Samacsys Released Date:2015-07-12 18:13:02
Is Samacsys:N最大集电极电流 (IC):8 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP功耗环境最大值:20 W
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzVCEsat-Max:1 V
Base Number Matches:1

MJD45H11T4 数据手册

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MJD44H11  
MJD45H11  
Complementary power transistors  
.
Features  
Low collector-emitter saturation voltage  
Fast switching speed  
TAB  
Surface-mounting TO-252 (DPAK) power  
package in tape and reel (suffix "T4")  
3
1
Applications  
Power amplifier  
Switching circuits  
DPAK  
TO-252  
Description  
Figure 1.  
Internal schematic diagram  
The devices are manufactured in low voltage multi  
epitaxial planar technology. They are intended for  
general purpose linear and switching applications.  
Table 1.  
Device summary  
Order codes  
Marking  
Polarity  
Package  
Packaging  
MJD44H11T4  
MJD45H11T4  
MJD44H11  
MJD45H11  
NPN  
PNP  
DPAK  
DPAK  
Tape and reel  
Tape and reel  
August 2009  
Doc ID 5470 Rev 3  
1/8  
www.st.com  
8

MJD45H11T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD45H11RL ONSEMI

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