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MJD45H11 PDF预览

MJD45H11

更新时间: 2024-11-06 14:53:23
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
6页 7450K
描述
TO-252-2L

MJD45H11 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
TO-252-2L Plastic-Encapsulate Transistors  
MJD45H11 TRANSISTOR (PNP)  
TO-252-2L  
FEATURES  
z
Designed for General Purpose Amplifier and Low Speed  
1.BASE  
Switching Applications  
2.COLLECTOR  
3.EMITTER  
2
z
z
z
DPAK for Surface-Mount Applications  
Low Collector Emitter Saturation Voltage  
High Current  
1
3
Equivalent Circuit  
ꢀꢁꢂꢃꢄꢅꢆ  
MJD45H11ꢀ'ꢁ#ꢂ"ꢁꢃ"ꢄꢅꢁꢃ ꢆꢄꢇꢂꢅꢃꢅꢄꢈꢀꢉꢊꢁꢁ ꢃ!  
ꢄꢇꢅꢂ  ꢃ"ꢄ!ꢋꢄꢌ ꢅꢃꢅꢁ#ꢂ"ꢁ$ꢃ  ꢂ(ꢃ ꢄ ꢁ$ꢈ)ꢁꢃ  
ꢄꢊ!ꢍꢇꢃꢅꢁ#ꢂ"ꢁ  
MJD45H11  
XXXX  
XXXX=Code  
ORDERING INFORMATION  
Part Number  
Package  
Packing Method  
Pack Quantity  
MJD45H11  
TO-252-2L  
tape  
2500pcs/reel  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-80  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-6.0  
-8.0  
V
Collector Current -Continuous  
A
RΘJC  
/W  
Thermal resistance from junction to case  
3.0  
68  
Thermal resistance from junction to ambient  
RΘJA  
PC  
/W  
Collector Power Dissipation  
1.8  
W
Operation Junction and Storage Temperature Range  
TJ,Tstg  
-55~150  
www.jscj-elec.com  
1
Rev. - 1.0  

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