生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.75 |
风险等级: | 5.21 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | 最大关闭时间(toff): | 640 ns |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD45H11-1G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD45H11A | NEXPERIA |
获取价格 |
80 V, 8 A PNP high power bipolar transistorProduction | |
MJD45H11G | ONSEMI |
获取价格 |
SILICON POWER TRANSISTORS | |
MJD45H11IP | RECTRON |
获取价格 |
Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polar | |
MJD45H11RL | ONSEMI |
获取价格 |
SILICON POWER TRANSISTORS | |
MJD45H11RLG | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD45H11T4 | STMICROELECTRONICS |
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Complementary power transistors | |
MJD45H11T4 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS | |
MJD45H11T4 | ONSEMI |
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SILICON POWER TRANSISTORS | |
MJD45H11T4G | ONSEMI |
获取价格 |
SILICON POWER TRANSISTORS |