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MJD45H11-1G PDF预览

MJD45H11-1G

更新时间: 2024-09-16 12:02:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC
页数 文件大小 规格书
9页 132K
描述
Complementary Power Transistors

MJD45H11-1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:ROHS COMPLIANT, DPAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:0.73
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:411926Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:MJD45H11-1GSamacsys Released Date:2019-10-26 12:02:57
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MJD45H11-1G 数据手册

 浏览型号MJD45H11-1G的Datasheet PDF文件第2页浏览型号MJD45H11-1G的Datasheet PDF文件第3页浏览型号MJD45H11-1G的Datasheet PDF文件第4页浏览型号MJD45H11-1G的Datasheet PDF文件第5页浏览型号MJD45H11-1G的Datasheet PDF文件第6页浏览型号MJD45H11-1G的Datasheet PDF文件第7页 
MJD44H11,  
NJVMJD44H11 (NPN),  
MJD45H11,  
NJVMJD45H11 (PNP)  
Complementary Power  
Transistors  
http://onsemi.com  
DPAK For Surface Mount Applications  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
80 VOLTS, 20 WATTS  
Features  
MARKING  
DIAGRAMS  
Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
4
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Electrically Similar to Popular D44H/D45H Series  
Low Collector Emitter Saturation Voltage −  
AYWW  
J4  
xH11G  
2
1
3
DPAK  
CASE 369C  
STYLE 1  
V
CE(sat)  
= 1.0 Volt Max @ 8.0 A  
Fast Switching Speeds  
Complementary Pairs Simplifies Designs  
Epoxy Meets UL 94 V0 @ 0.125 in  
4
ESD Ratings: Human Body Model, 3B u 8000 V  
AYWW  
J4  
xH11G  
Machine Model, C u 400 V  
NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These are PbFree Packages*  
1
2
3
IPAK  
CASE 369D  
STYLE 1  
A
Y
WW  
J4xH11  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Device Code  
x = 4 or 5  
=
PbFree Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 14  
MJD44H11/D  

MJD45H11-1G 替代型号

型号 品牌 替代类型 描述 数据表
MJD45H11-001G ONSEMI

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Complementary Power Transistors
MJD45H11-001 ONSEMI

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SILICON POWER TRANSISTORS
KSH45H11ITU ONSEMI

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PNP 外延硅晶体管

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