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MJD45H11T4 PDF预览

MJD45H11T4

更新时间： 2024-09-15 22:46:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
8页 92K
描述
SILICON POWER TRANSISTORS

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中文翻译

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MJD45H11T4 技术参数

是否无铅： 含铅生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.05
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：40
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：140 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：PNP最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：90 MHz
Base Number Matches：1

MJD45H11T4 数据手册

 浏览型号MJD45H11T4的Datasheet PDF文件第2页浏览型号MJD45H11T4的Datasheet PDF文件第3页浏览型号MJD45H11T4的Datasheet PDF文件第4页浏览型号MJD45H11T4的Datasheet PDF文件第5页浏览型号MJD45H11T4的Datasheet PDF文件第6页浏览型号MJD45H11T4的Datasheet PDF文件第7页 
MJD44H11 (NPN)  
MJD45H11 (PNP)  
Preferred Device  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Pb−Free Packages are Available  
• Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
80 VOLTS  
20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount  
(“T4” Suffix)  
MARKING  
DIAGRAMS  
• Electrically Similar to Popular D44H/D45H Series  
• Low Collector Emitter Saturation Voltage −  
4
YWW  
J4  
xH11  
DPAK  
CASE 369C  
STYLE 1  
V
CE(sat)  
= 1.0 Volt Max @ 8.0 Amperes  
• Fast Switching Speeds  
• Complementary Pairs Simplifies Designs  
2
1
3
• Epoxy Meets UL 94, V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
YWW  
J4  
xH11  
DPAK−3  
CASE 369D  
STYLE 1  
MAXIMUM RATINGS  
1
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
80  
5
Unit  
Vdc  
Vdc  
Adc  
2
3
V
CEO  
V
EB  
Y
= Year  
WW  
x
= Work Week  
= 4 or 5  
I
C
8
16  
Collector Current − Continuous  
Peak  
P
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
D
C
Derate above 25°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
P
1.75  
0.014  
Total Power Dissipation* @ T = 25°C  
W
W/°C  
A
Derate above 25°C  
dimensions section on page 3 of this data sheet.  
Operating and Storage Junction Temperature  
Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Preferred devices are recommended choices for future use  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
and best overall value.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
Lead Temperature for Soldering  
R
6.25  
71.4  
260  
°C/W  
°C/W  
°C  
q
q
JC  
JA  
L
R
T
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 6  
MJD44H11/D  
12345678

中文翻译

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MJD45H11T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD45H11TF ONSEMI

完全替代

 8 A, 80 V PNP Power Bipolar Junction Transistor
MJD45H11RLG ONSEMI

完全替代

 Complementary Power Transistors
MJD45H11G ONSEMI

完全替代

 SILICON POWER TRANSISTORS

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