Datasheet > MJD45H11IP

MJD45H11IP

更新时间： 2024-11-07 18:06:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	329K
描述
Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polarity : NPN;VCEO : 80 V;VEBO : 5 V;Max Collector Current : 8.0 A;DC Current Gain hFE Max : 40;Certified (AEC-Q101...etc) : AEC-Q101

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJD45H11IP 数据手册

MJD45H11

Marking code MJD45H11

Silicon PNP POWER triode

1 base 2 collector 3 emitter

encapsulation mode TO-251/TO-252

Ouline example

Designed for general purpose power and switching

Device

Devic

ꢀ

ackage

TO252

TO251

MJD45H11

MJD45H11IP

Maximum ratings(Ta=25 unless otherwise noted)

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Symbol

VCEO

VEBO

Value

-80

-5

Unit

-8

Collector Power Dissipation

Junction Temperatuye

P^C

Storage Temperatuye

Tstg

Electrical Characteristics (Ta=25 unless otherwise noted)

Parameter

Symbol

Test Condition

IC=-30A IB=0

Min

-80

-5

Max

Unit

Collector Emitter Sustaining Voltage VCEO(sus)

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

VEBO

ICES

IE=-100uA IC=0

VCE=-80V VBE=0

VCE=-5V IB=0

-1

-5

IEBO

Collector-Emitter Saturation Voltage VCE(sat) IC=-5A IB=-0.5A

-1.5

-2

Collector-Base Saturation Voltage

DC Current Gain

VBE(sat) IC=-5A IB=-0.5A

HFE

VCE=-5V IC=-1A

f=3MHz

MHz

transition frequency

2023-12/17

REV:D

中文翻译

下载PDF

与MJD45H11IP相关器件

型号	品牌	获取价格	描述	数据表
MJD45H11RL	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD45H11RLG	ONSEMI	获取价格	Complementary Power Transistors
MJD45H11T4	STMICROELECTRONICS	获取价格	Complementary power transistors
MJD45H11T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD45H11T4	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD45H11T4G	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD45H11TF	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
MJD45H11TF	ONSEMI	获取价格	8 A, 80 V PNP Power Bipolar Junction Transistor
MJD45H11TM	FAIRCHILD	获取价格	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK
MJD45H11TM	ONSEMI	获取价格	8 A, 80 V PNP Power Bipolar Junction Transistor