Datasheet > MJD45H11_10

MJD45H11_10

更新时间： 2024-11-05 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	164K
描述
PNP Epitaxial Silicon Transistor

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MJD45H11_10 数据手册

April 2010

MJD45H11

PNP Epitaxial Silicon Transistor

Applications

• General Purpose Power and Switching Such as Output or Driver Stages in Applications

• D-PAK for Surface Mount Applications

Features

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK: “-I” Suffix)

• Electrically Similar to Popular MJE45H

• Fast Switching Speeds

• Low Collector Emitter Saturation Voltage

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Parameter

Collector-Emitter Voltage

Emitter-Base Voltage

Value

- 80

Units

Symbol

V_CEO

V_EBO

I_C

- 5

- 8

Collector Current (DC)

I_CP

P_C

Collector Current (Pulse)

Collector Dissipation (T_C=25°C)

Collector Dissipation (T_A=25°C)

Junction Temperature

- 16

1.75

150

°C

T_J

T_STG

Storage Temperature

- 55 to +150

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

V_CEO(sus) *Collector-Emitter Sustaining Voltage I_C= - 30mA, I_B= 0

Typ.

Parameter

Test Condition

Min.

- 80

Max.

Units

I_CEO

I_EBO

Collector Cut-off Current

Emitter Cut-off Current

V_CE= - 80V, I_B= 0

V_BE= - 5V, I_C= 0

- 10

- 50

µA

V_CE= - 1V, I_C= - 2A

V_CE= - 1V, I_C= - 4A

h_FE

*DC Current Gain

V_CE(sat) *Collector-Emitter Saturation Voltage I_C= - 8A, I_B= - 0.4A

V_BE(on) *Base-Emitter Saturation Voltage I_C= - 8A, I_B= - 0.8A

- 1

- 1.5

f_T

C_ob

t_ON

t_STG

t_F

Current Gain Bandwidth Product

Collector Capacitance

Turn On Time

Storage Time

Fall Time

V_CE= - 10A, I_C= - 0.5A

V_CB= - 10V, f = 1MHz

230

135

500

100

MHz

I_C= - 5A

I_B1= - I_B2= - 0.5A

* Pulse Test: PW≤300µs, Duty Cycle≤2%

MJD45H11 Rev. C3

www.fairchildsemi.com

12 3 4 5

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