Datasheet > MJD45H11

MJD45H11

更新时间： 2024-11-02 11:15:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	236K
描述
80 V, 8 A PNP high power bipolar transistorProduction

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中文翻译

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技术参数
数据手册

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MJD45H11 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

MJD45H11 数据手册

MJD45H11

80 V, 8 A PNP high power bipolar transistor

12 September 2019

Product data sheet

1. General description

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device

(SMD) plastic package.

NPN complement: MJD44H11

2. Features and benefits

•

High thermal power dissipation capability

•

High energy efficiency due to less heat generation

Electrically similar to popular MJD45H series

Low collector emitter saturation voltage

Fast switching speeds

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Constant current drive backlighting application

Motor drive

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-80

I_C

collector current

-8

-16

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain V_CE= -1 V; I_C= -2 A; T_amb= 25 °C

12 3 4 5 6 7...12

中文翻译

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