MJD44H11T4G

更新时间： 2024-10-31 22:46:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	92K
描述
SILICON POWER TRANSISTORS

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中文翻译

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数据手册
替代型号

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MJD44H11T4G 数据手册

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

SILICON

POWER TRANSISTORS

8 AMPERES

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

80 VOLTS

20 WATTS

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel for Surface Mount

(“T4” Suffix)

MARKING

DIAGRAMS

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage −

YWW

xH11

DPAK

CASE 369C

STYLE 1

CE(sat)

= 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

YWW

xH11

DPAK−3

CASE 369D

STYLE 1

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Max

Unit

Vdc

Adc

CEO

= Year

= Work Week

= 4 or 5

Collector Current − Continuous

Peak

0.16

W/°C

Total Power Dissipation @ T = 25°C

Derate above 25°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

1.75

0.014

Total Power Dissipation* @ T = 25°C

W/°C

Derate above 25°C

dimensions section on page 3 of this data sheet.

Operating and Storage Junction Temperature

Range

T , T

−55 to

+150

°C

stg

Preferred devices are recommended choices for future use

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

and best overall value.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient*

Lead Temperature for Soldering

6.25

71.4

260

°C/W

°C

*These ratings are applicable when surface mounted on the minimum pad sizes

recommended.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 6

MJD44H11/D

12 3 4 5 6 7 8

中文翻译

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MJD44H11T4G 替代型号

型号	品牌	替代类型	描述	数据表
MJD44H11T5	ONSEMI	完全替代	SILICON POWER TRANSISTORS
MJD44H11G	ONSEMI	完全替代	SILICON POWER TRANSISTORS
MJD44H11RLG	ONSEMI	类似代替	Complementary Power Transistors

与MJD44H11T4G相关器件

型号	品牌	获取价格	描述	数据表
MJD44H11T5	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11T5G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
MJD44H11TF	ONSEMI	获取价格	8 A，80 V，NPN 双极功率晶体管
MJD44H11TM	FAIRCHILD	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
MJD44H11TM	ONSEMI	获取价格	8 A，80 V，NPN 双极功率晶体管
MJD45H11	KEXIN	获取价格	Complementary Power Transistors
MJD45H11	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD45H11	NEXPERIA	获取价格	80 V, 8 A PNP high power bipolar transistorProduction
MJD45H11	FAIRCHILD	获取价格	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK

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