品牌 | Logo | 应用领域 |
RECTRON | / | |
页数 | 文件大小 | 规格书 |
2页 | 329K | |
描述 | ||
Package / Case : TO-252(D-PAK);Mounting Style : SMD/SMT;Power Rating : 20 W;Transistor Polarity : PNP;VCEO : 80 V;VEBO : 5 V;Max Collector Current : 8.0 A;DC Current Gain hFE Max : 40;Certified (AEC-Q101...etc) : AEC-Q101 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD45H11_10 | FAIRCHILD |
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PNP Epitaxial Silicon Transistor | |
MJD45H11-001 | ONSEMI |
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SILICON POWER TRANSISTORS | |
MJD45H11-001G | ONSEMI |
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Complementary Power Transistors | |
MJD45H11-1 | MOTOROLA |
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SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS | |
MJD45H11-1 | SAMSUNG |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
MJD45H11-1G | ONSEMI |
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Complementary Power Transistors | |
MJD45H11A | NEXPERIA |
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80 V, 8 A PNP high power bipolar transistorProduction | |
MJD45H11G | ONSEMI |
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SILICON POWER TRANSISTORS | |
MJD45H11IP | RECTRON |
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Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polar | |
MJD45H11RL | ONSEMI |
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SILICON POWER TRANSISTORS |