型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD45H11_10 | FAIRCHILD |
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PNP Epitaxial Silicon Transistor | |
MJD45H11-001 | ONSEMI |
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SILICON POWER TRANSISTORS | |
MJD45H11-001G | ONSEMI |
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Complementary Power Transistors | |
MJD45H11-1 | MOTOROLA |
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SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS | |
MJD45H11-1 | SAMSUNG |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
MJD45H11-1G | ONSEMI |
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Complementary Power Transistors | |
MJD45H11A | NEXPERIA |
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80 V, 8 A PNP high power bipolar transistorProduction | |
MJD45H11G | ONSEMI |
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SILICON POWER TRANSISTORS | |
MJD45H11IP | RECTRON |
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Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polar | |
MJD45H11RL | ONSEMI |
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SILICON POWER TRANSISTORS |