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NJVMJD44E3T4G PDF预览

NJVMJD44E3T4G

更新时间： 2024-11-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率双极晶体管
页数 文件大小 规格书
3页 51K
描述
10 A，80 V，NPN 达林顿双极功率晶体管

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中文翻译

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NJVMJD44E3T4G 技术参数

是否无铅： 不含铅生命周期：Active
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：10 weeks
风险等级：5.77最大集电极电流 (IC)：10 A
配置：DARLINGTON最小直流电流增益 (hFE)：1000
JESD-609代码：e3湿度敏感等级：1
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED

NJVMJD44E3T4G 数据手册

 浏览型号NJVMJD44E3T4G的Datasheet PDF文件第2页浏览型号NJVMJD44E3T4G的Datasheet PDF文件第3页 
MJD44E3  
Preferred Device  
Darlington Power Transistor  
DPAK For Surface Mount Applications  
Designed for general purpose power and switching output or driver  
stages in applications such as switching regulators, converters, and  
power amplifiers.  
http://onsemi.com  
Features  
NPN DARLINGTON SILICON  
POWER TRANSISTORS  
10 AMPERES  
• Electrically Similar to Popular D44E3 Device  
• High DC Gain − 1000 Min @ 5.0 Adc  
• Low Sat. Voltage − 1.5 V @ 5.0 Adc  
80 VOLTS, 20 WATTS  
• Compatible With Existing Automatic Pick and Place Equipment  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
4
Machine Model, C u 400 V  
• Pb−Free Package is Available  
1 2  
3
MAXIMUM RATINGS  
DPAK  
CASE 369C  
STYLE 1  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
80  
7
Unit  
Vdc  
Vdc  
Adc  
W
V
CEO  
V
EB  
Collector Current − Continuous  
I
10  
C
MARKING DIAGRAM  
Total Power Dissipation  
P
D
D
20  
0.16  
@ T = 25°C  
C
W/°C  
W
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
1.75  
0.014  
YWW  
J
44E3G  
@ T = 25°C  
A
W/°C  
°C  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Y
WW  
= Year  
= Work Week  
Symbol  
Max  
Unit  
J44E3 = Device Code  
G
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
6.25  
°C/W  
= Pb−Free Package  
Thermal Resistance,  
R
q
JA  
71.4  
°C/W  
Junction−to−Ambient (Note 1)  
ORDERING INFORMATION  
Lead Temperature for Soldering  
T
260  
°C  
L
†
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJD44E3T4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
MJD44E3T4G  
DPAK  
(Pb−Free)  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
MJD44E3/D  
 
123

中文翻译

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NJVMJD44E3T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD44E3T4G ONSEMI

完全替代

 Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA

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