MJD44E3T4G

更新时间： 2024-10-31 03:00:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	51K
描述
Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

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中文翻译

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技术参数
数据手册
替代型号

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MJD44E3T4G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
Factory Lead Time：	4 weeks	风险等级：	0.8
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	80 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
最大功率耗散 (Abs)：	20 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MJD44E3T4G 数据手册

MJD44E3

Preferred Device

Darlington Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose power and switching output or driver

stages in applications such as switching regulators, converters, and

power amplifiers.

http://onsemi.com

Features

NPN DARLINGTON SILICON

POWER TRANSISTORS

10 AMPERES

• Electrically Similar to Popular D44E3 Device

• High DC Gain − 1000 Min @ 5.0 Adc

• Low Sat. Voltage − 1.5 V @ 5.0 Adc

80 VOLTS, 20 WATTS

• Compatible With Existing Automatic Pick and Place Equipment

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Package is Available

1 2

MAXIMUM RATINGS

DPAK

CASE 369C

STYLE 1

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Max

Unit

Vdc

Adc

CEO

Collector Current − Continuous

MARKING DIAGRAM

Total Power Dissipation

0.16

@ T = 25°C

W/°C

Derate above 25°C

Total Power Dissipation (Note 1)

1.75

0.014

YWW

44E3G

@ T = 25°C

W/°C

°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

= Year

= Work Week

Symbol

Max

Unit

J44E3 = Device Code

Thermal Resistance,

Junction−to−Case

6.25

°C/W

= Pb−Free Package

Thermal Resistance,

71.4

°C/W

Junction−to−Ambient (Note 1)

ORDERING INFORMATION

Lead Temperature for Soldering

260

°C

†

Device

Package

Shipping

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MJD44E3T4

DPAK

2500/Tape & Reel

MJD44E3T4G

DPAK

(Pb−Free)

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 4

MJD44E3/D

12 3

中文翻译

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MJD44E3T4G 替代型号

型号	品牌	替代类型	描述	数据表
NJVMJD44E3T4G	ONSEMI	完全替代	10 A，80 V，NPN 达林顿双极功率晶体管
MJD44E3T4	ONSEMI	类似代替	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WA
MJD44E3T4	MOTOROLA	功能相似	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

与MJD44E3T4G相关器件

型号	品牌	获取价格	描述	数据表
MJD44H11	FAIRCHILD	获取价格	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK
MJD44H11	KEXIN	获取价格	Complementary Power Transistors
MJD44H11	TYSEMI	获取价格	Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD44H11	NEXPERIA	获取价格	80 V, 8 A NPN high power bipolar transistorProduction
MJD44H11	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD44H11	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11	YANGJIE	获取价格	TO-252
MJD44H11	BL Galaxy Electrical	获取价格	80V,8A,General Purpose NPN Bipolar Transistor
MJD44H11	RECTRON	获取价格	Package / Case : TO-252(D-PAK);Mounting Style : SMD/SMT;Power Rating : 20 W;Transistor Pol

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