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NJVMJD41CT4G PDF预览

NJVMJD41CT4G

更新时间： 2024-09-14 01:12:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 121K
描述
Complementary Power Transistors

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中文翻译

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NJVMJD41CT4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.12
最大集电极电流 (IC)：6 A配置：Single
最小直流电流增益 (hFE)：15JESD-609代码：e3
湿度敏感等级：1最高工作温度：150 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：20 W子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIED标称过渡频率 (fT)：3 MHz
Base Number Matches：1

NJVMJD41CT4G 数据手册

 浏览型号NJVMJD41CT4G的Datasheet PDF文件第2页浏览型号NJVMJD41CT4G的Datasheet PDF文件第3页浏览型号NJVMJD41CT4G的Datasheet PDF文件第4页浏览型号NJVMJD41CT4G的Datasheet PDF文件第5页浏览型号NJVMJD41CT4G的Datasheet PDF文件第6页浏览型号NJVMJD41CT4G的Datasheet PDF文件第7页 
MJD41Cꢀ(NPN),  
MJD42Cꢀ(PNP)  
Complementary Power  
Transistors  
DPAK for Surface Mount Applications  
http://onsemi.com  
Designed for general purpose amplifier and low speed switching  
applications.  
SILICON  
POWER TRANSISTORS  
6 AMPERES  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
100 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Electrically Similar to Popular TIP41 and TIP42 Series  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COMPLEMENTARY  
COLLECTOR  
2, 4  
COLLECTOR  
2, 4  
1
1
• These Devices are Pb−Free and are RoHS Compliant  
BASE  
BASE  
MAXIMUM RATINGS  
3
3
EMITTER  
EMITTER  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
Symbol  
Max  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
V
CEO  
4
V
CB  
V
EB  
4
I
C
6
1
2
3
1
2
I
10  
2
CM  
3
I
B
DPAK  
IPAK  
CASE 369C  
STYLE 1  
CASE 369D  
STYLE 1  
Total Power Dissipation  
P
P
W
W/°C  
D
20  
0.16  
@ T = 25°C  
C
Derate above 25°C  
MARKING DIAGRAMS  
Total Power Dissipation (Note 1)  
W
W/°C  
°C  
D
1.75  
0.014  
@ T = 25°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
AYWW  
J4xCG  
AYWW  
J4xCG  
stg  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
DPAK  
IPAK  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
J4xC = Device Code  
x = 1 or 2  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 12  
MJD41C/D  
 
1234567

中文翻译

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NJVMJD41CT4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD41CTF ONSEMI

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