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NJVMJD31CG PDF预览

NJVMJD31CG

更新时间： 2024-11-02 01:23:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 100K
描述
Complementary Power Transistors

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中文翻译

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NJVMJD31CG 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：0.42
Is Samacsys：NJESD-609代码：e3
湿度敏感等级：1端子面层：Tin (Sn)
Base Number Matches：1

NJVMJD31CG 数据手册

 浏览型号NJVMJD31CG的Datasheet PDF文件第2页浏览型号NJVMJD31CG的Datasheet PDF文件第3页浏览型号NJVMJD31CG的Datasheet PDF文件第4页浏览型号NJVMJD31CG的Datasheet PDF文件第5页浏览型号NJVMJD31CG的Datasheet PDF文件第6页浏览型号NJVMJD31CG的Datasheet PDF文件第7页 
MJD31 (NPN), MJD32 (PNP)  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching  
applications.  
www.onsemi.com  
Features  
SILICON  
POWER TRANSISTORS  
3 AMPERES  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
• Straight Lead Version in Plastic Sleeves (“1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
• Electrically Similar to Popular TIP31 and TIP32 Series  
• Epoxy Meets UL 94, V−0 @ 0.125 in  
40 AND 100 VOLTS  
15 WATTS  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COMPLEMENTARY  
COLLECTOR  
2,4  
COLLECTOR  
2,4  
• These Devices are Pb−Free and are RoHS Compliant  
1
1
MAXIMUM RATINGS  
BASE  
BASE  
Rating  
Symbol  
Max  
Unit  
Collector−Emitter Voltage  
MJD31, MJD32  
MJD31C, MJD32C  
V
CEO  
Vdc  
3
3
40  
100  
EMITTER  
EMITTER  
Collector−Base Voltage  
MJD31, MJD32  
MJD31C, MJD32C  
V
CB  
Vdc  
4
40  
100  
4
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
V
5.0  
3.0  
5.0  
1.0  
Vdc  
Adc  
Adc  
Adc  
EB  
I
C
1
2
1
2
3
I
CM  
3
I
B
DPAK  
IPAK  
CASE 369C  
STYLE 1  
CASE 369D  
STYLE 1  
Total Power Dissipation  
P
D
W
W/°C  
15  
0.12  
@ T = 25°C  
C
Derate above 25°C  
MARKING DIAGRAMS  
Total Power Dissipation  
P
D
W
W/°C  
1.56  
0.012  
@ T = 25°C  
A
Derate above 25°C  
Operating and Storage Junction Temperature  
Range  
T , T  
−65 to  
+150  
°C  
J
stg  
YWW  
J3xxG  
AYWW  
J3xxG  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
DPAK  
IPAK  
Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
A
Y
WW  
xx  
G
= Site Code  
= Year  
= Work Week  
= 1, 1C, 2, or 2C  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.3  
80  
Unit  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
Lead Temperature for Soldering Purposes  
R
q
JC  
q
JA  
L
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
R
T
260  
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
September, 2016 − Rev. 16  
MJD31/D  
1234567...10

中文翻译

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NJVMJD31CG 替代型号

型号 品牌 替代类型 描述 数据表
MJD31CRL ONSEMI

完全替代

 Complementary Power Transistors
MJD31CT4G ONSEMI

类似代替

 Complementary Power Transistors
MJD31CG ONSEMI

类似代替

 Complementary Power Transistors

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