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NJVMJD253T4G-VF01 PDF预览

NJVMJD253T4G-VF01

更新时间： 2024-11-06 19:56:07
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 138K
描述
4.0 A, 100 V PNP Bipolar Power Transistor, 2500-REEL

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NJVMJD253T4G-VF01 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：DPAK-3/2
Reach Compliance Code：not_compliant风险等级：1.63
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：15JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
Base Number Matches：1

NJVMJD253T4G-VF01 数据手册

 浏览型号NJVMJD253T4G-VF01的Datasheet PDF文件第2页浏览型号NJVMJD253T4G-VF01的Datasheet PDF文件第3页浏览型号NJVMJD253T4G-VF01的Datasheet PDF文件第4页浏览型号NJVMJD253T4G-VF01的Datasheet PDF文件第5页浏览型号NJVMJD253T4G-VF01的Datasheet PDF文件第6页 
NJVMJD253T4G-VF01  
Complementary Silicon  
Plastic Power Transistors  
DPAK−3 for Surface Mount Applications  
Designed for low voltage, low−power, high−gain audio amplifier  
applications.  
www.onsemi.com  
Features  
• High DC Current Gain  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
4.0 A, 100 V, 12.5 W  
POWER TRANSISTOR  
COMPLEMENTARY  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Low Collector−Emitter Saturation Voltage  
• High Current−Gain − Bandwidth Product  
• Annular Construction for Low Leakage  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
COLLECTOR  
2, 4  
1
BASE  
• NJV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable*  
3
EMITTER  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
4
Compliant  
2
1
MAXIMUM RATINGS  
3
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
Symbol  
Value  
100  
100  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
DPAK−3  
CASE 369C  
STYLE 1  
V
CB  
V
CEO  
V
EB  
MARKING DIAGRAM  
I
C
4.0  
I
8.0  
CM  
I
B
1.0  
AYWW  
J253G  
Total Device Dissipation  
P
D
D
@ T = 25°C  
12.5  
0.1  
W
W/°C  
C
Derate above 25°C  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Total Device Dissipation  
P
@ T = 25°C (Note 2)  
1.4  
0.011  
W
W/°C  
A
Derate above 25°C  
G
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
ORDERING INFORMATION  
ESD − Human Body Model  
ESD − Machine Model  
HBM  
MM  
3B  
C
V
V
Device  
Package  
Shipping†  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
DPAK  
2,500  
NJVMJD253T4G−VF01*  
(Pb−Free) Tape & Reel  
1. When surface mounted on minimum pad sizes recommended.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
NJVMJD253T4G−VF01/D  
February, 2017 − Rev. 0  
123456

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