Datasheet > NJVMJD2955T4G

NJVMJD2955T4G

更新时间： 2024-02-23 04:03:52

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	184K
描述
Complementary Power Transistors

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中文翻译

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数据手册
替代型号

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NJVMJD2955T4G 数据手册

MJD2955,

NJVMJD2955T4Gꢀ(PNP)

MJD3055,

NJVMJD3055T4Gꢀ(NPN)

Complementary Power

Transistors

http://onsemi.com

DPAK For Surface Mount Applications

SILICON

POWER TRANSISTORS

10 AMPERES

Designed for general purpose amplifier and low speed switching

applications.

60 VOLTS, 20 WATTS

Features

 Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

 Straight Lead Version in Plastic Sleeves (“−1” Suffix)

 Electrically Similar to MJE2955 and MJE3055

 DC Current Gain Specified to 10 Amperes

DPAK

CASE 369C

STYLE 1

IPAK

CASE 369D

STYLE 1

 High Current Gain−Bandwidth Product − f = 2.0 MHz (Min) @ I

= 500 mAdc

 Epoxy Meets UL 94 V−0 @ 0.125 in

 ESD Ratings:

MARKING DIAGRAMS

 Human Body Model, 3B > 8000 V

 Machine Model, C > 400 V

 NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

AYWW

xx55G

AYWW

xx55G

 These are Pb−Free Packages*

DPAK

IPAK

= Assembly Location

= Year

WW = Work Week

Jxx55 = Device Code

x = 29 or 30

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012

Publication Order Number:

February, 2012 − Rev. 12

MJD2955/D

12 3 4 5 6 7

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NJVMJD2955T4G 替代型号

型号	品牌	替代类型	描述	数据表
KSH2955TF	ONSEMI	完全替代	PNP外延硅晶体管
KSH2955TM	ONSEMI	完全替代	PNP外延硅晶体管
MJD2955T4G	ONSEMI	类似代替	Complementary Power Transistors DPAK For Surface Mount Applications

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