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NJVMJD210T4G PDF预览

NJVMJD210T4G

更新时间： 2024-11-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率双极晶体管
页数 文件大小 规格书
6页 88K
描述
5.0 A, 25 V PNP Bipolar Power Transistor

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NJVMJD210T4G 数据手册

 浏览型号NJVMJD210T4G的Datasheet PDF文件第2页浏览型号NJVMJD210T4G的Datasheet PDF文件第3页浏览型号NJVMJD210T4G的Datasheet PDF文件第4页浏览型号NJVMJD210T4G的Datasheet PDF文件第5页浏览型号NJVMJD210T4G的Datasheet PDF文件第6页 
MJD200 (NPN)  
MJD210 (PNP)  
Complementary Plastic  
Power Transistors  
NPN/PNP Silicon DPAK For Surface  
Mount Applications  
http://onsemi.com  
Designed for low voltage, low−power, high−gain audio  
amplifier applications.  
SILICON  
POWER TRANSISTORS  
5 AMPERES  
Features  
• Collector−Emitter Sustaining Voltage −  
25 VOLTS, 12.5 WATTS  
V
= 25 Vdc (Min) @ I = 10 mAdc  
C
CEO(sus)  
• High DC Current Gain − h = 70 (Min) @ I = 500 mAdc  
FE  
C
= 45 (Min) @ I = 2 Adc  
C
4
= 10 (Min) @ I = 5 Adc  
C
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
2
1
3
• Low Collector−Emitter Saturation Voltage −  
DPAK  
CASE 369C  
STYLE 1  
V
CE(sat)  
= 0.3 Vdc (Max) @ I = 500 mAdc  
C
= 0.75 Vdc (Max) @ I = 2.0 Adc  
C
• High Current−Gain − Bandwidth Product −  
f = 65 MHz (Min) @ I = 100 mAdc  
T
C
• Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
MARKING DIAGRAM  
I
CBO  
CB  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
YWW  
J2x0G  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
• Pb−Free Packages are Available  
Y
= Year  
MAXIMUM RATINGS  
WW = Work Week  
x = 1 or 0  
G
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
= Pb−Free Package  
V
CB  
V
25  
CEO  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
V
8.0  
EB  
I
5.0  
10  
Collector Current − Continuous  
− Peak  
C
Base Current  
I
1.0  
Adc  
B
P
12.5  
0.1  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
D
C
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
1.4  
0.011  
W
W/°C  
@ T = 25°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 8  
MJD200/D  
 
123456

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NJVMJD210T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD210T4 ONSEMI

完全替代

 Complementary Plastic Power Transistors
MJD210RL ONSEMI

完全替代

 Complementary Plastic Power Transistors
MJD210 ONSEMI

完全替代

 Complementary Plastic Power Transistors

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