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NJVMJD148T4G PDF预览

NJVMJD148T4G

更新时间： 2024-11-05 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 110K
描述
4 A, 45 V NPN Bipolar Power Transistor

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NJVMJD148T4G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：5.2
最大集电极电流 (IC)：4 A配置：Single
最小直流电流增益 (hFE)：85JESD-609代码：e3
湿度敏感等级：1最高工作温度：150 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：20 W子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIED标称过渡频率 (fT)：3 MHz
Base Number Matches：1

NJVMJD148T4G 数据手册

 浏览型号NJVMJD148T4G的Datasheet PDF文件第2页浏览型号NJVMJD148T4G的Datasheet PDF文件第3页浏览型号NJVMJD148T4G的Datasheet PDF文件第4页浏览型号NJVMJD148T4G的Datasheet PDF文件第5页 
MJD148  
NPN Silicon Power  
Transistor  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching  
applications.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
4.0 AMPERES  
45 VOLTS, 20 WATTS  
• High Gain − 50 Min @ I = 2.0 A  
C
• Low Saturation Voltage − 0.5 V @ I = 2.0 A  
C
• High Current Gain − Bandwidth Product − f = 3.0 MHz Min @  
T
I = 250 mAdc  
C
MARKING  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B; >8000 V  
Machine Model, C; >400 V  
• This is a Pb−Free Package  
DIAGRAM  
4
DPAK  
CASE 369C  
STYLE 1  
AYWW  
J148G  
2
1
3
A
Y
= Assembly Location  
= Year  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
WW  
= Work Week  
J148 = Device Code  
= Pb−Free Package  
V
CEO  
G
V
45  
CB  
EB  
V
5.0  
ORDERING INFORMATION  
Collector Current − Continuous  
− Peak  
I
C
4.0  
7.0  
†
Device  
Package  
Shipping  
Base Current  
I
50  
mAdc  
B
MJD148T4  
DPAK  
2500/Tape & Reel  
2500/Tape & Reel  
Total Power Dissipation @ T = 25°C  
P
20  
0.16  
W
W/°C  
C
D
MJD148T4G  
DPAK  
(Pb−Free)  
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
@ T = 25°C  
1.75  
W
A
Derate above 25°C  
0.014  
W/°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
(Note 1)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 5  
MJD148/D  
 
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NJVMJD148T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD148T4G ONSEMI

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