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MJD148T4

更新时间： 2024-11-03 21:54:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 73K
描述
NPN Silicon Power Transistor

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MJD148T4 数据手册

 浏览型号MJD148T4的Datasheet PDF文件第2页浏览型号MJD148T4的Datasheet PDF文件第3页浏览型号MJD148T4的Datasheet PDF文件第4页浏览型号MJD148T4的Datasheet PDF文件第5页浏览型号MJD148T4的Datasheet PDF文件第6页 
MJD148  
NPN Silicon Power  
Transistor  
DPAK For Surface Mount Applications  
Designed for general purpose amplifier and low speed switching  
applications.  
http://onsemi.com  
• High Gain − 50 Min @ I = 2.0 A  
• Low Saturation Voltage − 0.5 V @ I = 2.0 A  
• High Current Gain − Bandwidth Product − f = 3.0 MHz Min @  
C
4.0 Amps  
45 Volts  
20 Watts  
C
T
I = 250 mAdc  
C
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B; >8000 V  
POWER TRANSISTOR  
Machine Model, C; >400 V  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
45  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
4
DPAK  
CASE 369C  
STYLE 1  
V
CEO  
YWW  
J148  
V
45  
2
1
CB  
EB  
3
V
5.0  
Collector Current − Continuous  
Peak  
I
C
4.0  
7.0  
J148  
Y
WW  
= Device Code  
= Year  
= Work Week  
Base Current  
I
50  
mAdc  
B
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
20  
0.16  
W
W/°C  
C
D
Total Power Dissipation (Note 1)  
P
D
@ T = 25°C  
1.75  
W
ORDERING INFORMATION  
A
Derate above 25°C  
0.014  
W/°C  
†
Device  
MJD148T4  
Package  
Shipping  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
DPAK  
2500/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
JA  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 2  
MJD148/D  
 
123456

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MJD148T4 替代型号

型号 品牌 替代类型 描述 数据表
NJVMJD148T4G ONSEMI

类似代替

 4 A, 45 V NPN Bipolar Power Transistor
MJD148T4G ONSEMI

类似代替

 NPN Silicon Power Transistor

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