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MJD210-1

更新时间： 2024-10-31 22:29:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 239K
描述
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

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MJD210-1 数据手册

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Order this document  
by MJD200/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN/PNP Silicon DPAK For Surface Mount  
Applications  
SILICON  
POWER TRANSISTORS  
5 AMPERES  
. . . designed for low voltage, low–power, high–gain audio amplifier applications.  
•
Collector–Emitter Sustaining Voltage —  
= 25 Vdc (Min) @ I = 10 mAdc  
V
CEO(sus)  
High DC Current Gain — h  
C
25 VOLTS  
12.5 WATTS  
•
= 70 (Min) @ I = 500 mAdc  
FE  
C
= 45 (Min) @ I = 2 Adc  
C
= 10 (Min) @ I = 5 Adc  
C
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Low Collector–Emitter Saturation Voltage —  
V
= 0.3 Vdc (Max) @ I = 500 mAdc  
CE(sat)  
C
= 0.75 Vdc (Max) @ I = 2.0 Adc  
C
•
•
High Current–Gain — Bandwidth Product — f = 65 MHz (Min) @ I = 100 mAdc  
Annular Construction for Low Leakage — I  
T
CBO  
C
CASE 369A–13  
= 100 nAdc @ Rated V  
CB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
CB  
V
CEO  
25  
V
EB  
8
CASE 369–07  
Collector Current — Continuous  
Peak  
I
C
5
10  
Base Current  
I
B
1
Adc  
Total Device Dissipation @ T = 25 C  
C
P
12.5  
0.1  
Watts  
W/ C  
D
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
Derate above 25 C  
Total Device Dissipation @ T = 25 C*  
A
Derate above 25 C  
P
D
1.4  
0.011  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient*  
R
θJC  
R
θJA  
10  
89.3  
C/W  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (1)  
Symbol  
Min  
Max  
Unit  
V
25  
—
Vdc  
CEO(sus)  
(I = 10 mAdc, I = 0)  
C
B
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= 40 Vdc, I = 0)  
—
—
100  
100  
inches  
mm  
E
= 40 Vdc, I = 0, T = 125 C)  
E
J
Emitter Cutoff Current (V  
BE  
= 8 Vdc, I = 0)  
I
—
100  
nAdc  
C
EBO  
* When surface mounted on minimum pad sizes recommended.  
(continued)  
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  
2%.  
REV 1  
Motorola, Inc. 1995
123456

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