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MJD243 PDF预览

MJD243

更新时间: 2024-11-23 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 212K
描述
NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

MJD243 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code:unknownHTS代码:8541.29.00.75
风险等级:5.16外壳连接:COLLECTOR
最大集电极电流 (IC):4 A基于收集器的最大容量:50 pF
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
功耗环境最大值:12.5 W最大功率耗散 (Abs):13 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHz最大关闭时间(toff):200 ns
VCEsat-Max:0.6 VBase Number Matches:1

MJD243 数据手册

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Order this document  
by MJD243/D  
SEMICONDUCTOR TECHNICAL DATA  
DPAK For Surface Mount Applications  
*Motorola Preferred Device  
. . . designed for low voltage, low–power, high–gain audio amplifier applications.  
NPN SILICON  
POWER TRANSISTOR  
4 AMPERES  
Collector–Emitter Sustaining Voltage — V = 100 Vdc (Min) @ I = 10 mAdc  
CEO(sus) C  
High DC Current Gain — h  
FE  
= 40 (Min) @ I = 200 mAdc  
C
= 15 (Min) @ I = 1.0 Adc  
C
100 VOLTS  
12.5 WATTS  
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)  
Straight Lead Version in Plastic Sleeves (“–1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Low Collector–Emitter Saturation Voltage —  
V
= 0.3 Vdc (Max) @ I = 500 mAdc  
CE(sat)  
C
= 0.6 Vdc (Max) @ I = 1.0 Adc  
C
High Current–Gain — Bandwidth Product — f = 40 MHz (Min) @ I = 100 mAdc  
Annular Construction for Low Leakage — I  
T
CBO  
C
= 100 nAdc @ Rated V  
CB  
MAXIMUM RATINGS  
CASE 369A–13  
Rating  
Symbol  
Value  
Unit  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
100  
100  
7
Vdc  
Vdc  
Vdc  
Adc  
CB  
V
CEO  
V
EB  
Collector Current — Continuous  
Peak  
I
4
8
C
Base Current  
I
B
1
Adc  
CASE 369–07  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
12.5  
0.1  
Watts  
W/ C  
Total Device Dissipation @ T = 25 C*  
A
Derate above 25 C  
P
D
1.4  
0.011  
Watts  
W/ C  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
Junction to Ambient*  
R
θJC  
R
θJA  
10  
89.3  
C/W  
* When surface mounted on minimum pad sizes recommended.  
T
T
C
A
2.5 25  
2
20  
1.5 15  
T
(SURFACE MOUNT)  
A
1
0.5  
0
10  
5
inches  
mm  
T
C
0
25  
50  
75  
100  
125  
150  
T, TEMPERATURE (  
°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995

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4A, 100V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3