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MJD243T4G PDF预览

MJD243T4G

更新时间: 2024-10-31 22:14:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC
页数 文件大小 规格书
8页 128K
描述
Complementary Silicon Plastic Power Transistor

MJD243T4G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3/2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:0.65
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:411916Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:DPAK (SINGLE GAUGE) CASE 369C ISSUE F_4Samacsys Released Date:2020-01-23 10:00:54
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):12.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MJD243T4G 数据手册

 浏览型号MJD243T4G的Datasheet PDF文件第2页浏览型号MJD243T4G的Datasheet PDF文件第3页浏览型号MJD243T4G的Datasheet PDF文件第4页浏览型号MJD243T4G的Datasheet PDF文件第5页浏览型号MJD243T4G的Datasheet PDF文件第6页浏览型号MJD243T4G的Datasheet PDF文件第7页 
MJD243 (NPN),  
MJD253 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistor  
DPAK−3 for Surface Mount Applications  
http://onsemi.com  
Designed for low voltage, low−power, high−gain audio amplifier  
applications.  
4.0 A, 100 V, 12.5 W  
Features  
POWER TRANSISTOR  
Collector−Emitter Sustaining Voltage −  
V
= 100 Vdc (Min) @ I  
4
CEO(sus)  
C
= 10 mAdc  
4
High DC Current Gain −  
h
= 40 (Min) @ I  
= 200 mAdc  
FE  
C
1
2
1
Base  
Collector  
2
3
3
Emitter  
= 15 (Min) @ I = 1.0 Adc  
C
DPAK−3  
CASE 369D  
STYLE 1  
DPAK−3  
CASE 369C  
STYLE 1  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Low Collector−Emitter Saturation Voltage −  
MARKING DIAGRAMS  
V
CE(sat)  
= 0.3 Vdc (Max) @ I  
= 500 mAdc  
YWW  
J2x3  
YWW  
J2x3  
C
= 0.6 Vdc (Max) @ I = 1.0 Adc  
C
High Current−Gain − Bandwidth Product −  
f = 40 MHz (Min) @ I  
Y
= Year  
WW = Work Week  
J2x3 = Device Code  
= 4 or 5  
T
C
= 100 mAdc  
Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
x
I
CBO  
CB  
Epoxy Meets UL 94, V−0 @ 0.125 in.  
ORDERING INFORMATION  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
Device  
Package  
DPAK−3  
DPAK−3  
Shipping  
MJD243  
75 Units/Rail  
Pb−Free Package is Available  
MJD243T4  
2500/Tape & Reel  
2500/Tape & Reel  
MJD243T4G  
DPAK−3  
(Pb−Free)  
MJD253−1  
MJD253T4  
DPAK−3  
DPAK−3  
75 Units/Rail  
2500/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 8  
MJD243/D  

MJD243T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD243T4 ONSEMI

完全替代

Complementary Silicon Plastic Power Transistor
NJVMJD243T4G ONSEMI

类似代替

Complementary Silicon Plastic Power Transistors
MJD243G ONSEMI

类似代替

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

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