是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.74 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 12.5 W | 最大功率耗散 (Abs): | 1.4 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD253-001 | ONSEMI |
获取价格 |
4.0 A,100 V PNP 双极功率晶体管 | |
MJD253-1 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253-1 | MOTOROLA |
获取价格 |
4A, 100V, PNP, Si, POWER TRANSISTOR, CASE 369-05, DPAK-3 | |
MJD253-1G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications | |
MJD253T4 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253T4 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
MJD253T4G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications | |
MJD2873 | NEXPERIA |
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50 V, 2 A NPN high power bipolar transistorProduction | |
MJD2873Q | DIODES |
获取价格 |
NPN, 50V, 2A, TO252 | |
MJD2873-Q | NEXPERIA |
获取价格 |
50 V, 2 A NPN high power bipolar transistorProduction |