是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G2 | Reach Compliance Code: | unknown |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.74 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 4 A |
基于收集器的最大容量: | 50 pF | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | R-PDSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 12.5 W |
最大功率耗散 (Abs): | 13 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
最大关闭时间(toff): | 200 ns | VCEsat-Max: | 0.6 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD243T4G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253 | MOTOROLA |
获取价格 |
4A, 100V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3 | |
MJD253 | FOSHAN |
获取价格 |
TO-252 | |
MJD253-001 | ONSEMI |
获取价格 |
4.0 A,100 V PNP 双极功率晶体管 | |
MJD253-1 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253-1 | MOTOROLA |
获取价格 |
4A, 100V, PNP, Si, POWER TRANSISTOR, CASE 369-05, DPAK-3 | |
MJD253-1G | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications | |
MJD253T4 | ONSEMI |
获取价格 |
Complementary Silicon Plastic Power Transistor | |
MJD253T4 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |