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MJD243_07 PDF预览

MJD243_07

更新时间: 2024-11-01 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 98K
描述
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

MJD243_07 数据手册

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MJD243 (NPN),  
MJD253 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistor  
DPAK−3 for Surface Mount Applications  
http://onsemi.com  
Designed for low voltage, low−power, high−gain audio amplifier  
applications.  
4.0 A, 100 V, 12.5 W  
Features  
POWER TRANSISTOR  
Collector−Emitter Sustaining Voltage −  
V
= 100 Vdc (Min) @ I  
= 10 mAdc  
CEO(sus)  
C
High DC Current Gain −  
4
h
= 40 (Min) @ I  
FE  
C
4
= 200 mAdc  
= 15 (Min) @ I = 1.0 Adc  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
C
2
1
1
Base  
3
2
Collector  
Emitter  
3
Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
Low Collector−Emitter Saturation Voltage −  
DPAK−3  
CASE 369D  
STYLE 1  
DPAK−3  
CASE 369C  
STYLE 1  
V
= 0.3 Vdc (Max) @ I  
= 500 mAdc  
CE(sat)  
C
= 0.6 Vdc (Max) @ I = 1.0 Adc  
C
High Current−Gain − Bandwidth Product −  
MARKING DIAGRAMS  
f
= 40 MHz (Min) @ I  
= 100 mAdc  
T
C
Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
Epoxy Meets UL 94 V−0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
YWW  
J253G  
YWW  
J2x3G  
I
CBO  
CB  
Y
= Year  
Pb−Free Packages are Available  
WW = Work Week  
x
= 4 or 5  
= Pb−Free Package  
G
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 10  
MJD243/D  

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