Datasheet > MJD243R-HAF

MJD243R-HAF

更新时间： 2024-11-02 14:52:19

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	715K
描述
功率三极管

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MJD243R-HAF 数据手册

MJD243R-HAF

NPN Silicon Epitaxial Planar Power Transistor

Features

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

100

Peak Collector Current, Pulse

Base Current

I_CM

I_B

12.5

1.4

T_C= 25 C

Total Dissipation

P_tot

T_a= 25 C

Operating Junction Temperature

Storage Temperature Range

T_j

- 65 to + 150

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

89.3

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 29/08/2022 Rev: 03

12 3 4 5

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