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MJD243_11 PDF预览

MJD243_11

更新时间: 2024-11-01 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 143K
描述
Complementary Silicon Plastic Power Transistor

MJD243_11 数据手册

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MJD243 (NPN),  
MJD253 (PNP)  
Complementary Silicon  
Plastic Power Transistor  
DPAK3 for Surface Mount Applications  
http://onsemi.com  
Designed for low voltage, lowpower, highgain audio amplifier  
applications.  
4.0 A, 100 V, 12.5 W  
POWER TRANSISTOR  
Features  
CollectorEmitter Sustaining Voltage −  
V
= 100 Vdc (Min) @ I  
= 10 mAdc  
CEO(sus)  
C
4
4
High DC Current Gain −  
h
FE  
= 40 (Min) @ I  
C
2
1
= 200 mAdc  
= 15 (Min) @ I = 1.0 Adc  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
1
Base  
3
2
C
Collector  
Emitter  
3
DPAK3  
CASE 369D  
STYLE 1  
DPAK3  
CASE 369C  
STYLE 1  
Straight Lead Version in Plastic Sleeves (“1” Suffix)  
Low CollectorEmitter Saturation Voltage −  
V
CE(sat)  
= 0.3 Vdc (Max) @ I  
= 500 mAdc  
C
MARKING DIAGRAMS  
= 0.6 Vdc (Max) @ I = 1.0 Adc  
C
High CurrentGain Bandwidth Product −  
f
= 40 MHz (Min) @ I  
= 100 mAdc  
T
C
AYWW  
J253G  
AYWW  
J2x3G  
Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
I
CBO  
CB  
A
Y
= Assembly Location  
= Year  
Epoxy Meets UL 94 V0 @ 0.125 in  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
WW = Work Week  
x
G
= 4 or 5  
= PbFree Package  
These are PbFree Packages  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 12  
MJD243/D  

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