Datasheet > MJD210R

MJD210R

更新时间： 2024-11-28 14:54:39

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	227K
描述
功率三极管

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中文翻译

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数据手册

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MJD210R 数据手册

MJD210R-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• High DC Current Gain

• Low Collector Emitter Saturation Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

1.Base 2.Collector 3.Emitter

TO-252 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current, Pulsed

-I_CM

Ta = 25℃

T_C= 25℃

1.4

12.5

Power Dissipation

P_tot

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 08/03/2022 Rev: 01

12 3 4 5

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