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MJD243 PDF预览

MJD243

更新时间: 2024-11-23 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
8页 128K
描述
Complementary Silicon Plastic Power Transistor

MJD243 技术参数

是否无铅:含铅生命周期:Obsolete
包装说明:PLASTIC, CASE 369C-01, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.15
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):13 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MJD243 数据手册

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MJD243 (NPN),  
MJD253 (PNP)  
Preferred Device  
Complementary Silicon  
Plastic Power Transistor  
DPAK−3 for Surface Mount Applications  
http://onsemi.com  
Designed for low voltage, low−power, high−gain audio amplifier  
applications.  
4.0 A, 100 V, 12.5 W  
Features  
POWER TRANSISTOR  
Collector−Emitter Sustaining Voltage −  
V
= 100 Vdc (Min) @ I  
4
CEO(sus)  
C
= 10 mAdc  
4
High DC Current Gain −  
h
= 40 (Min) @ I  
= 200 mAdc  
FE  
C
1
2
1
Base  
Collector  
2
3
3
Emitter  
= 15 (Min) @ I = 1.0 Adc  
C
DPAK−3  
CASE 369D  
STYLE 1  
DPAK−3  
CASE 369C  
STYLE 1  
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)  
Low Collector−Emitter Saturation Voltage −  
MARKING DIAGRAMS  
V
CE(sat)  
= 0.3 Vdc (Max) @ I  
= 500 mAdc  
YWW  
J2x3  
YWW  
J2x3  
C
= 0.6 Vdc (Max) @ I = 1.0 Adc  
C
High Current−Gain − Bandwidth Product −  
f = 40 MHz (Min) @ I  
Y
= Year  
WW = Work Week  
J2x3 = Device Code  
= 4 or 5  
T
C
= 100 mAdc  
Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
x
I
CBO  
CB  
Epoxy Meets UL 94, V−0 @ 0.125 in.  
ORDERING INFORMATION  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
Device  
Package  
DPAK−3  
DPAK−3  
Shipping  
MJD243  
75 Units/Rail  
Pb−Free Package is Available  
MJD243T4  
2500/Tape & Reel  
2500/Tape & Reel  
MJD243T4G  
DPAK−3  
(Pb−Free)  
MJD253−1  
MJD253T4  
DPAK−3  
DPAK−3  
75 Units/Rail  
2500/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 8  
MJD243/D  

MJD243 替代型号

型号 品牌 替代类型 描述 数据表
MJD243G ONSEMI

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Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications
MJD243T4 ONSEMI

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Complementary Silicon Plastic Power Transistor
MJD243T4G ONSEMI

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Complementary Silicon Plastic Power Transistor

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4A, 100V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3