Datasheet > 晶体管 > 功率场效应晶体管> MJD210L-TN3-R

MJD210L-TN3-R

更新时间： 2024-09-13 07:15:23

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	204K
描述
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJD210L-TN3-R 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	TO-252	包装说明：	LEAD FREE PACKAGE-3
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.1
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	25 V
最小直流电流增益 (hFE)：	10	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	标称过渡频率 (fT)：	65 MHz
Base Number Matches：	1

MJD210L-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

MJD210

PNP SILICON TRANSISTOR

PNP SILICON DPAK FOR

SURFACE MOUNT

APPLICATIONS

DESCRIPTION

TO-252

The UTC MJD210 is designed for low voltage, low-power,

high-gain audio amplifier applications.

FEATURE

*Collector-Emitter Sustaining Voltage

_CEO(SUS)=-25V (Min) @ I_C=-10mA

TO-251

*High DC Current Gain

h_FE=70 (Min) @ I_C=-500mA

=45 (Min) @ I_C=-2A

=10 (Min) @ I_C=-5A

*Lead Formed for Surface Mount Applications in

Plastic Sleeves (No Suffix)

*Straight Lead Version in Plastic Sleeves (“-1” Suffix)

*Lead Formed Version in 16mm Tape and Reel

(“T4” Suffix)

*Low Collector – Emitter Saturation Voltage

V_CE(SAT)= -0.3V (Max) @ I_C=-500mA

= -0.75V (Max) @ I_C= -2.0 A

*High Current-Gain-Bandwidth Product

f_T= 65 MHz (Min) @ I_C= -100 mA

*Annular Construction for Low Leakage

_CBO= -100 nA @ Rated V_CB

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free Plating

MJD210L-TM3-T

MJD210L-TN3-T

MJD210L-TN3-R

Halogen Free

MJD210G-TM3-T

MJD210G-TN3-T

MJD210G-TN3-R

TO-251

TO-252

Tube

Tape Reel

www.unisonic.com.tw

1 of 5

QW-R213-001.C

12 3 4 5

中文翻译

下载PDF

与MJD210L-TN3-R相关器件

型号	品牌	获取价格	描述	数据表
MJD210L-TN3-T	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210R	SWST	获取价格	功率三极管
MJD210RL	ONSEMI	获取价格	Complementary Plastic Power Transistors
MJD210RLG	ONSEMI	获取价格	Complementary Plastic Power Transistors
MJD210T4	ONSEMI	获取价格	Complementary Plastic Power Transistors
MJD210T4	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MJD210T4G	ONSEMI	获取价格	Complementary Plastic Power Transistors
MJD210TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
MJD243	MOTOROLA	获取价格	NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS
MJD243	ONSEMI	获取价格	Complementary Silicon Plastic Power Transistor