Datasheet > 晶体管 > 功率场效应晶体管> MJD210L-TN3-R

MJD210L-TN3-R

更新时间： 2024-11-01 07:15:23

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	204K
描述
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

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中文翻译

获取价格

技术参数
数据手册

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MJD210L-TN3-R 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	TO-252	包装说明：	LEAD FREE PACKAGE-3
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.1
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	25 V
最小直流电流增益 (hFE)：	10	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	标称过渡频率 (fT)：	65 MHz
Base Number Matches：	1

MJD210L-TN3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

MJD210

PNP SILICON TRANSISTOR

PNP SILICON DPAK FOR

SURFACE MOUNT

APPLICATIONS

DESCRIPTION

TO-252

The UTC MJD210 is designed for low voltage, low-power,

high-gain audio amplifier applications.

FEATURE

*Collector-Emitter Sustaining Voltage

_CEO(SUS)=-25V (Min) @ I_C=-10mA

TO-251

*High DC Current Gain

h_FE=70 (Min) @ I_C=-500mA

=45 (Min) @ I_C=-2A

=10 (Min) @ I_C=-5A

*Lead Formed for Surface Mount Applications in

Plastic Sleeves (No Suffix)

*Straight Lead Version in Plastic Sleeves (“-1” Suffix)

*Lead Formed Version in 16mm Tape and Reel

(“T4” Suffix)

*Low Collector – Emitter Saturation Voltage

V_CE(SAT)= -0.3V (Max) @ I_C=-500mA

= -0.75V (Max) @ I_C= -2.0 A

*High Current-Gain-Bandwidth Product

f_T= 65 MHz (Min) @ I_C= -100 mA

*Annular Construction for Low Leakage

_CBO= -100 nA @ Rated V_CB

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Lead Free Plating

MJD210L-TM3-T

MJD210L-TN3-T

MJD210L-TN3-R

Halogen Free

MJD210G-TM3-T

MJD210G-TN3-T

MJD210G-TN3-R

TO-251

TO-252

Tube

Tape Reel

www.unisonic.com.tw

1 of 5

QW-R213-001.C

12 3 4 5

中文翻译

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