5秒后页面跳转
MJD210G-TN3-T PDF预览

MJD210G-TN3-T

更新时间: 2024-09-13 07:15:23
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
5页 204K
描述
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

MJD210G-TN3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:HALOGEN FREE PACKAGE-3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
最大集电极电流 (IC):5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):65 MHz
Base Number Matches:1

MJD210G-TN3-T 数据手册

 浏览型号MJD210G-TN3-T的Datasheet PDF文件第2页浏览型号MJD210G-TN3-T的Datasheet PDF文件第3页浏览型号MJD210G-TN3-T的Datasheet PDF文件第4页浏览型号MJD210G-TN3-T的Datasheet PDF文件第5页 
UNISONIC TECHNOLOGIES CO., LTD  
MJD210  
PNP SILICON TRANSISTOR  
PNP SILICON DPAK FOR  
SURFACE MOUNT  
APPLICATIONS  
1
„
DESCRIPTION  
TO-252  
The UTC MJD210 is designed for low voltage, low-power,  
high-gain audio amplifier applications.  
„
FEATURE  
1
*Collector-Emitter Sustaining Voltage  
CEO(SUS) =-25V (Min) @ IC =-10mA  
TO-251  
V
*High DC Current Gain  
hFE =70 (Min) @ IC=-500mA  
=45 (Min) @ IC=-2A  
=10 (Min) @ IC=-5A  
*Lead Formed for Surface Mount Applications in  
Plastic Sleeves (No Suffix)  
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)  
*Lead Formed Version in 16mm Tape and Reel  
(“T4” Suffix)  
*Low Collector – Emitter Saturation Voltage  
VCE(SAT) = -0.3V (Max) @ IC =-500mA  
= -0.75V (Max) @ IC = -2.0 A  
*High Current-Gain-Bandwidth Product  
fT = 65 MHz (Min) @ IC = -100 mA  
*Annular Construction for Low Leakage  
I
CBO = -100 nA @ Rated VCB  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free Plating  
MJD210L-TM3-T  
MJD210L-TN3-T  
MJD210L-TN3-R  
Halogen Free  
1
B
B
B
2
C
C
C
3
E
E
E
MJD210G-TM3-T  
MJD210G-TN3-T  
MJD210G-TN3-R  
TO-251  
TO-252  
TO-252  
Tube  
Tube  
Tape Reel  
www.unisonic.com.tw  
Copyright © 2007 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R213-001.C  

与MJD210G-TN3-T相关器件

型号 品牌 获取价格 描述 数据表
MJD210I FAIRCHILD

获取价格

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
MJD210-I FAIRCHILD

获取价格

D-PAK for Surface Mount Applications
MJD210L-TM3-T UTC

获取价格

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210L-TN3-R UTC

获取价格

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210L-TN3-T UTC

获取价格

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210R SWST

获取价格

功率三极管
MJD210RL ONSEMI

获取价格

Complementary Plastic Power Transistors
MJD210RLG ONSEMI

获取价格

Complementary Plastic Power Transistors
MJD210T4 ONSEMI

获取价格

Complementary Plastic Power Transistors
MJD210T4 MOTOROLA

获取价格

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS