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MJD210G PDF预览

MJD210G

更新时间: 2024-11-01 03:45:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 88K
描述
Complementary Plastic Power Transistors

MJD210G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, CASE 369A, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:0.43
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):12.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):65 MHz
Base Number Matches:1

MJD210G 数据手册

 浏览型号MJD210G的Datasheet PDF文件第2页浏览型号MJD210G的Datasheet PDF文件第3页浏览型号MJD210G的Datasheet PDF文件第4页浏览型号MJD210G的Datasheet PDF文件第5页浏览型号MJD210G的Datasheet PDF文件第6页 
MJD200 (NPN)  
MJD210 (PNP)  
Complementary Plastic  
Power Transistors  
NPN/PNP Silicon DPAK For Surface  
Mount Applications  
http://onsemi.com  
Designed for low voltage, low−power, high−gain audio  
amplifier applications.  
SILICON  
POWER TRANSISTORS  
5 AMPERES  
Features  
Collector−Emitter Sustaining Voltage −  
25 VOLTS, 12.5 WATTS  
V
= 25 Vdc (Min) @ I = 10 mAdc  
C
CEO(sus)  
High DC Current Gain − h = 70 (Min) @ I = 500 mAdc  
FE  
C
= 45 (Min) @ I = 2 Adc  
C
4
= 10 (Min) @ I = 5 Adc  
C
Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
2
1
3
Low Collector−Emitter Saturation Voltage −  
DPAK  
CASE 369C  
STYLE 1  
V
CE(sat)  
= 0.3 Vdc (Max) @ I = 500 mAdc  
C
= 0.75 Vdc (Max) @ I = 2.0 Adc  
C
High Current−Gain − Bandwidth Product −  
f = 65 MHz (Min) @ I = 100 mAdc  
T
C
Annular Construction for Low Leakage −  
= 100 nAdc @ Rated V  
MARKING DIAGRAM  
I
CBO  
CB  
Epoxy Meets UL 94 V−0 @ 0.125 in  
YWW  
J2x0G  
ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
Pb−Free Packages are Available  
Y
= Year  
MAXIMUM RATINGS  
WW = Work Week  
x = 1 or 0  
G
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
= Pb−Free Package  
V
CB  
V
25  
CEO  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
V
8.0  
EB  
I
5.0  
10  
Collector Current − Continuous  
− Peak  
C
Base Current  
I
1.0  
Adc  
B
P
12.5  
0.1  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
D
C
Derate above 25°C  
Total Power Dissipation (Note 1)  
P
1.4  
0.011  
W
W/°C  
@ T = 25°C  
A
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 8  
MJD200/D  
 

MJD210G 替代型号

型号 品牌 替代类型 描述 数据表
KSH210TM ONSEMI

完全替代

PNP外延硅晶体管
KSH210TF ONSEMI

完全替代

PNP外延硅晶体管

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