是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 6.13 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 65 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSH210TF | ONSEMI |
完全替代 |
PNP外延硅晶体管 | |
MJD210T4G | ONSEMI |
完全替代 |
Complementary Plastic Power Transistors | |
MJD210G | ONSEMI |
完全替代 |
Complementary Plastic Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH29 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications | |
KSH2955 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica | |
KSH2955I | FAIRCHILD |
获取价格 |
暂无描述 | |
KSH2955-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH2955ITU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic | |
KSH2955TF | ROCHESTER |
获取价格 |
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH2955TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
KSH2955TF | ONSEMI |
获取价格 |
PNP外延硅晶体管 | |
KSH2955-TF | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH2955TM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic |