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KSH29-I PDF预览

KSH29-I

更新时间: 2024-11-25 20:05:15
品牌 Logo 应用领域
三星 - SAMSUNG 放大器晶体管
页数 文件大小 规格书
2页 94K
描述
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

KSH29-I 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
功耗环境最大值:15 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:0.7 VBase Number Matches:1

KSH29-I 数据手册

 浏览型号KSH29-I的Datasheet PDF文件第2页 

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