生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.25 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH31C-I | SAMSUNG |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSH31CTF | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
KSH31CTF | ONSEMI |
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NPN外延硅晶体管 | |
KSH31CTM | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
KSH31I | FAIRCHILD |
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暂无描述 | |
KSH31-I | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
KSH31TF | ROCHESTER |
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3A, 40V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3 | |
KSH31TF | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
KSH32 | FAIRCHILD |
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General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica | |
KSH32C | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica |