生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.26 | Is Samacsys: | N |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH32CTF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
KSH32CTF | ONSEMI |
获取价格 |
PNP外延硅晶体管 | |
KSH32I | FAIRCHILD |
获取价格 |
3 A, 40 V, PNP, Si, POWER TRANSISTOR, IPAK-3 | |
KSH32-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH32TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH340 | FAIRCHILD |
获取价格 |
High Voltage Power Transistors D-PAK for Surface Mount Applications | |
KSH340I | FAIRCHILD |
获取价格 |
0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, IPAK-3 | |
KSH340TF | ONSEMI |
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NPN外延硅晶体管 | |
KSH350 | FAIRCHILD |
获取价格 |
High Voltage Power Transistors D-PAK for Surface Mount Applications | |
KSH350I | FAIRCHILD |
获取价格 |
0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, IPAK-3 |