Datasheet > KSH3055TF

KSH3055TF

更新时间： 2024-11-26 11:12:35

品牌	Logo	应用领域
安森美 - ONSEMI		放大器晶体管
页数	文件大小	规格书
7页	168K
描述
NPN外延硅晶体管

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技术参数
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替代型号

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KSH3055TF 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.15	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	20 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	2 MHz
Base Number Matches：	1

KSH3055TF 数据手册

Is Now Part of

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

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email any questions regarding the system integration to Fairchild_questions@onsemi.com.

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KSH3055TF 替代型号

型号	品牌	替代类型	描述	数据表
MJD3055G	ONSEMI	完全替代	Complementary Power Transistors DPAK For Surface Mount Applications
MJD3055T4	ONSEMI	类似代替	Complementary Power Transistors DPAK For Surface Mount Applications

与KSH3055TF相关器件

型号	品牌	获取价格	描述	数据表
KSH3055-TF	SAMSUNG	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSH3055TM	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSH3055TM	ONSEMI	获取价格	NPN外延硅晶体管
KSH30A20	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KSH30C	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications
KSH30C	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH30CI	FAIRCHILD	获取价格	1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3
KSH30C-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH30C-I	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
KSH30CITU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic

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